Scaling Design Effects on Surface Buffer IGBT Characteristics

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Scaling design effects on surface buffer (SB) insulated gate bipolar transistor (IGBT) is analyzed not only for power loss reduction but also for switching controllability and robustness using TCAD simulation. Although the scaling design improves turn-off loss and on-state voltage drop V ce(sat) trade-off due to injection enhancement (IE) effect, turn-on surge current is increased by the enhancement of negative gate capacitance due to thin gate oxide. Dual gate control improves turn-on switching controllability by hole current path control. Short circuit robustness is improved by the scaling design, because the saturation current is decreased with the scaling design due to pinch-off of the n-MOS channel. From these results, the scaling design is effective in improving the SB-IGBT characteristics including high robustness.

    Original languageEnglish
    Pages (from-to)23-28
    Number of pages6
    JournalIEEE Journal of the Electron Devices Society
    Volume10
    DOIs
    Publication statusPublished - 2022

    All Science Journal Classification (ASJC) codes

    • Biotechnology
    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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