S iG e ミキシング誘起溶融成長によるG OI（G e on Ins ulator）の形成: 人工単結晶への道

Translated title of the contribution: SiGe-mixing-triggered rapid-melting growth for Ge-on-insulator formation: A road to artificial crystal

Research output: Contribution to journal › Review article › peer-review

Translated title of the contribution	SiGe-mixing-triggered rapid-melting growth for Ge-on-insulator formation: A road to artificial crystal
Original language	Japanese
Article number	5
Pages (from-to)	410
Number of pages	5
Journal	OYOBUTURI
Volume	81
Publication status	Published - May 2012

Cite this

@article{a77f1461d9e741efadb48d26af974e02,

title = "S iG e ミキシング誘起溶融成長によるG OI（G e on Ins ulator）の形成: 人工単結晶への道",

author = "Masanobu Miyao and Taizoh Sadoh and Kaoru Toko and Masashi Kurosawa",

year = "2012",

month = may,

language = "日本語",

volume = "81",

pages = "410",

journal = "OYOBUTURI",

}