| Translated title of the contribution | SiGe-mixing-triggered rapid-melting growth for Ge-on-insulator formation: A road to artificial crystal |
|---|---|
| Original language | Japanese |
| Article number | 5 |
| Pages (from-to) | 410 |
| Number of pages | 5 |
| Journal | OYOBUTURI |
| Volume | 81 |
| Publication status | Published - May 2012 |
S iG e ミキシング誘起溶融成長によるG OI（G e on Ins ulator）の形成: 人工単結晶への道
Masanobu Miyao, Taizoh Sadoh, Kaoru Toko, Masashi Kurosawa
Research output: Contribution to journal › Review article › peer-review