TY - JOUR
T1 - Room-temperature gold-gold bonding method based on argon and hydrogen gas mixture atmospheric-pressure plasma treatment for optoelectronic device integration
AU - Higurashi, Eiji
AU - Yamamoto, Michitaka
AU - Sato, Takeshi
AU - Suga, Tadatomo
AU - Sawada, Renshi
N1 - Funding Information:
Part of this study was supported by JSPS KAKENHI Grant Numbers 23246125 and 25289085.
Publisher Copyright:
Copyright © 2016 The Institute of Electronics, Information and Communication Engineers.
PY - 2016/3
Y1 - 2016/3
N2 - Low-temperature bonding methods of optoelectronic chips, such as laser diodes (LD) and photodiode (PD) chips, have been the focus of much interest to develop highly functional and compact optoelectronic devices, such as microsensors and communication modules. In this paper, room-temperature bonding of the optoelectronic chips with Au thin film to coined Au stud bumps with smooth surfaces (Ra: 1.3 nm) using argon and hydrogen gas mixture atmospheric-pressure plasma was demonstrated in ambient air. The die-shear strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (x2). The measured results of the light-current-voltage characteristics of the LD chips and the dark current-voltage characteristics of the PD chips indicated no degradation after bonding.
AB - Low-temperature bonding methods of optoelectronic chips, such as laser diodes (LD) and photodiode (PD) chips, have been the focus of much interest to develop highly functional and compact optoelectronic devices, such as microsensors and communication modules. In this paper, room-temperature bonding of the optoelectronic chips with Au thin film to coined Au stud bumps with smooth surfaces (Ra: 1.3 nm) using argon and hydrogen gas mixture atmospheric-pressure plasma was demonstrated in ambient air. The die-shear strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (x2). The measured results of the light-current-voltage characteristics of the LD chips and the dark current-voltage characteristics of the PD chips indicated no degradation after bonding.
UR - http://www.scopus.com/inward/record.url?scp=84959505392&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84959505392&partnerID=8YFLogxK
U2 - 10.1587/transele.E99.C.339
DO - 10.1587/transele.E99.C.339
M3 - Article
AN - SCOPUS:84959505392
SN - 0916-8524
VL - E99C
SP - 339
EP - 345
JO - IEICE Transactions on Electronics
JF - IEICE Transactions on Electronics
IS - 3
ER -