Room-temperature epitaxial growth of ferromagnetic Fe3 Si films on Si(111) by facing target direct-current sputtering

T. Yoshitake; D. Nakagauchi; T. Ogawa; M. Itakura; N. Kuwano; Y. Tomokiyo; T. Kajiwara; K. Nagayama

doi:10.1063/1.1978984

Room-temperature epitaxial growth of ferromagnetic Fe₃ Si films on Si(111) by facing target direct-current sputtering

T. Yoshitake, D. Nakagauchi, T. Ogawa, M. Itakura, N. Kuwano, Y. Tomokiyo, T. Kajiwara, K. Nagayama

Materials Physics and Engineering

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

Ferromagnetic Fe3 Si thin films with an extremely smooth surface morphology can be epitaxially grown on Si(111) at room temperature by facing target direct-current sputtering. The epitaxial relationship is Fe3 Si (111) ∥Si (111) with Fe3 Si [1 1- 0] ∥Si [1- 10]. By the application of the extinction rule of x-ray diffraction, the generated Fe3 Si was confirmed to possess a B2 structure and not a D O3 one. The film showed a saturation magnetization value of 960 emu cm3, which was slightly lower than that of bulk D O3 - Fe3 Si. It was observed that the magnetization easy axis was along the [1 1- 0] direction in the film plane.

Original language	English
Article number	262505
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	26
DOIs	https://doi.org/10.1063/1.1978984
Publication status	Published - Jun 27 2005

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1978984

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title = "Room-temperature epitaxial growth of ferromagnetic Fe3 Si films on Si(111) by facing target direct-current sputtering",

abstract = "Ferromagnetic Fe3 Si thin films with an extremely smooth surface morphology can be epitaxially grown on Si(111) at room temperature by facing target direct-current sputtering. The epitaxial relationship is Fe3 Si (111) ∥Si (111) with Fe3 Si [1 1- 0] ∥Si [1- 10]. By the application of the extinction rule of x-ray diffraction, the generated Fe3 Si was confirmed to possess a B2 structure and not a D O3 one. The film showed a saturation magnetization value of 960 emu cm3, which was slightly lower than that of bulk D O3 - Fe3 Si. It was observed that the magnetization easy axis was along the [1 1- 0] direction in the film plane.",

author = "T. Yoshitake and D. Nakagauchi and T. Ogawa and M. Itakura and N. Kuwano and Y. Tomokiyo and T. Kajiwara and K. Nagayama",

note = "Funding Information: The SEM observation and the XRD measurement were conducted using the equipment at the Center of Advanced Instrumental Analysis, Kyushu University. This work was supported by the Asahi Glass Foundation. ",

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T1 - Room-temperature epitaxial growth of ferromagnetic Fe3 Si films on Si(111) by facing target direct-current sputtering

AU - Yoshitake, T.

AU - Nakagauchi, D.

AU - Ogawa, T.

AU - Itakura, M.

AU - Kuwano, N.

AU - Tomokiyo, Y.

AU - Kajiwara, T.

AU - Nagayama, K.

N1 - Funding Information: The SEM observation and the XRD measurement were conducted using the equipment at the Center of Advanced Instrumental Analysis, Kyushu University. This work was supported by the Asahi Glass Foundation.

PY - 2005/6/27

Y1 - 2005/6/27

N2 - Ferromagnetic Fe3 Si thin films with an extremely smooth surface morphology can be epitaxially grown on Si(111) at room temperature by facing target direct-current sputtering. The epitaxial relationship is Fe3 Si (111) ∥Si (111) with Fe3 Si [1 1- 0] ∥Si [1- 10]. By the application of the extinction rule of x-ray diffraction, the generated Fe3 Si was confirmed to possess a B2 structure and not a D O3 one. The film showed a saturation magnetization value of 960 emu cm3, which was slightly lower than that of bulk D O3 - Fe3 Si. It was observed that the magnetization easy axis was along the [1 1- 0] direction in the film plane.

AB - Ferromagnetic Fe3 Si thin films with an extremely smooth surface morphology can be epitaxially grown on Si(111) at room temperature by facing target direct-current sputtering. The epitaxial relationship is Fe3 Si (111) ∥Si (111) with Fe3 Si [1 1- 0] ∥Si [1- 10]. By the application of the extinction rule of x-ray diffraction, the generated Fe3 Si was confirmed to possess a B2 structure and not a D O3 one. The film showed a saturation magnetization value of 960 emu cm3, which was slightly lower than that of bulk D O3 - Fe3 Si. It was observed that the magnetization easy axis was along the [1 1- 0] direction in the film plane.

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Room-temperature epitaxial growth of ferromagnetic Fe₃ Si films on Si(111) by facing target direct-current sputtering

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