Room Temperature Bonding of SiO2Wafers Using ALD Al2O3Ultrathin Film

Kenji Uno; Ryo Takakura; Ryo Takigawa

doi:10.1109/LTB-3D64053.2024.10774099

Room Temperature Bonding of SiO₂Wafers Using ALD Al₂O₃Ultrathin Film

Kenji Uno, Ryo Takakura, Ryo Takigawa

Integrated Electronic Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper focuses on surface activated bonding (SAB) of ALD Al2O3 ultrathin films. SAB method using 2 nm thick Al2O3films was found to produce a strong bond between SiO2/SiO2 at room temperature.

Original language	English
Title of host publication	2024 8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798331519919
DOIs	https://doi.org/10.1109/LTB-3D64053.2024.10774099
Publication status	Published - 2024
Event	8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024 - Nara, Japan Duration: Oct 30 2024 → Nov 1 2024

Publication series

Name	2024 8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024

Conference

Conference	8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024
Country/Territory	Japan
City	Nara
Period	10/30/24 → 11/1/24

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/LTB-3D64053.2024.10774099

Cite this

Uno, K., Takakura, R., & Takigawa, R. (2024). Room Temperature Bonding of SiO₂Wafers Using ALD Al₂O₃Ultrathin Film. In 2024 8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024 (2024 8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LTB-3D64053.2024.10774099

Room Temperature Bonding of SiO₂Wafers Using ALD Al₂O₃Ultrathin Film. / Uno, Kenji; Takakura, Ryo; Takigawa, Ryo.
2024 8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024. Institute of Electrical and Electronics Engineers Inc., 2024. (2024 8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Uno, K, Takakura, R & Takigawa, R 2024, Room Temperature Bonding of SiO₂Wafers Using ALD Al₂O₃Ultrathin Film. in 2024 8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024. 2024 8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024, Institute of Electrical and Electronics Engineers Inc., 8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024, Nara, Japan, 10/30/24. https://doi.org/10.1109/LTB-3D64053.2024.10774099

Uno K, Takakura R, Takigawa R. Room Temperature Bonding of SiO₂Wafers Using ALD Al₂O₃Ultrathin Film. In 2024 8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024. Institute of Electrical and Electronics Engineers Inc. 2024. (2024 8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024). doi: 10.1109/LTB-3D64053.2024.10774099

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