A room-temperature bonding technique using cone-shaped microbumps with the aid of ultrasonic vibration is applied to the fabrication of a nearinfrared (NIR) image sensor. The image sensor is fabricated using the chip-on-chip integration of an InGaAs photodiode array on an InP substrate and a Si CMOS readout IC. The pixel pitch is 25μm to compose quarter-VGA class (320×256 pixels) resolution. A high-quality imaging of a heated object is demonstrated. Bonding of the VGA array with 15μm pitch is attempted to realize a high-resolution image sensor.
All Science Journal Classification (ASJC) codes
- General Engineering
- General Physics and Astronomy