TY - JOUR
T1 - Role of Pr segregation in acceptor-state formation at ZnO grain boundaries
AU - Sato, Yukio
AU - Buban, James P.
AU - Mizoguchi, Teruyasu
AU - Shibata, Naoya
AU - Yodogawa, Masatada
AU - Yamamoto, Takahisa
AU - Ikuhara, Yuichi
PY - 2006/9/11
Y1 - 2006/9/11
N2 - The role of Pr doping on double Schottky barrier formations at ZnO single grain boundaries was investigated by the combination of current-voltage measurements, atomic-resolution Z-contrast scanning transmission electron microscopy, and first-principles calculations. Although Pr segregated to the specific atomic site along the boundaries, it was found not to be the direct cause of nonlinear current-voltage properties. Instead, under appropriate annealing conditions, Pr enhances formations of acceptor-type native defects that are essential for the creation of double Schottky barriers in ZnO.
AB - The role of Pr doping on double Schottky barrier formations at ZnO single grain boundaries was investigated by the combination of current-voltage measurements, atomic-resolution Z-contrast scanning transmission electron microscopy, and first-principles calculations. Although Pr segregated to the specific atomic site along the boundaries, it was found not to be the direct cause of nonlinear current-voltage properties. Instead, under appropriate annealing conditions, Pr enhances formations of acceptor-type native defects that are essential for the creation of double Schottky barriers in ZnO.
UR - http://www.scopus.com/inward/record.url?scp=33748300556&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33748300556&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.97.106802
DO - 10.1103/PhysRevLett.97.106802
M3 - Article
AN - SCOPUS:33748300556
SN - 0031-9007
VL - 97
JO - Physical Review Letters
JF - Physical Review Letters
IS - 10
M1 - 106802
ER -