Role of Pr segregation in acceptor-state formation at ZnO grain boundaries

Yukio Sato, James P. Buban, Teruyasu Mizoguchi, Naoya Shibata, Masatada Yodogawa, Takahisa Yamamoto, Yuichi Ikuhara

Research output: Contribution to journalArticlepeer-review

93 Citations (Scopus)


The role of Pr doping on double Schottky barrier formations at ZnO single grain boundaries was investigated by the combination of current-voltage measurements, atomic-resolution Z-contrast scanning transmission electron microscopy, and first-principles calculations. Although Pr segregated to the specific atomic site along the boundaries, it was found not to be the direct cause of nonlinear current-voltage properties. Instead, under appropriate annealing conditions, Pr enhances formations of acceptor-type native defects that are essential for the creation of double Schottky barriers in ZnO.

Original languageEnglish
Article number106802
JournalPhysical Review Letters
Issue number10
Publication statusPublished - Sept 11 2006
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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