Role of hydrogen and oxygen gas in the growth of carbon thin films by pulsed laser deposition

Tsuyoshi Yoshitake, Takashi Nishiyama, Kunihito Nagayama

    Research output: Contribution to journalConference articlepeer-review

    54 Citations (Scopus)


    Carbon thin films of thickness 100 nm were deposited at a substrate temperature of 20 °C by pulsed laser deposition using a graphite target. The laser source used was an ArF excimer laser. The ambient pressure was varied between 10-7 and 1 Torr by adjusting the gas flow of hydrogen or oxygen. Raman spectrum measurement showed a broad peak with a center at 1550 cm-1 for all films deposited in both ambient gases, similar to those of typical diamond-like carbon films prepared using other methods. The absorption coefficients decreased and the optical band gaps increased at pressures higher than 10 mTorr for hydrogen and 0.1 mTorr for oxygen. These results indicate that both hydrogen and oxygen are effective in etching an sp2 bonding fraction. The sp2 etching processes for ambient hydrogen and oxygen could be explained well by the combination of the expected ablation processes and the reaction rate between carbon atoms and the ambient gases.

    Original languageEnglish
    Pages (from-to)689-692
    Number of pages4
    JournalDiamond and Related Materials
    Issue number3
    Publication statusPublished - 2000
    Event10th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide - Prague, Czech Republic
    Duration: Sept 12 1999Sept 17 1999

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Chemistry(all)
    • Mechanical Engineering
    • Materials Chemistry
    • Electrical and Electronic Engineering


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