Role of heavily b-doped layer on low-temperature Fe gettering in bifacial Si solar cell fabrication

Takeshi Terakawa, Dong Wang, Hiroshi Nakashima

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

The gettering behaviors of Fe into Si with and without a p+ layer are investigated by deep-level transient spectroscopy. The samples contaminated with Fe in a wide concentration range were annealed at 600°C to induce gettering. The surface-layer gettering behaviors of Fe for the sample without the p+ layer strongly depend on the Fe contamination level, in which the surface-layer gettering is not effective for the sample with low-level contamination at a concentration of less than 1 × 10 13cm-3 but effective for the sample with middle-level contamination at a concentration of (1-5) × 1013cm -3. In contrast, the samples with the p+ layer show effective gettering for low- and middle-level contaminations. The gettering mechanisms of Fe in Si without and with the p+ layer are discussed in detail.

Original languageEnglish
Pages (from-to)2643-2647
Number of pages5
JournalJapanese Journal of Applied Physics
Volume45
Issue number4 A
DOIs
Publication statusPublished - Apr 7 2006

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy

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