TY - JOUR
T1 - Role of an interlayer at a TiN/Ge contact to alleviate the intrinsic Fermi-level pinning position toward the conduction band edge
AU - Yamamoto, Keisuke
AU - Mitsuhara, Masatoshi
AU - Hiidome, Keisuke
AU - Noguchi, Ryutaro
AU - Nishida, Minoru
AU - Wang, Dong
AU - Nakashima, Hiroshi
PY - 2014/3/31
Y1 - 2014/3/31
N2 - TiN/Ge contacts, prepared by direct sputter deposition from a TiN target, can alleviate the intrinsic Fermi-level pinning (FLP) position toward the conduction band edge. This work focuses on studying the origin of the FLP alleviation. Investigations on both the electrical properties and interfacial structures of TiN/Ge contacts showed that an amorphous interlayer (IL) containing nitrogen played an important role in the alleviation. For comparison, the properties of Ti/Ge contacts were also studied. Based on these results, the IL structure that induced the FLP alleviation was clearly shown and a model was proposed to explain the FLP alleviation.
AB - TiN/Ge contacts, prepared by direct sputter deposition from a TiN target, can alleviate the intrinsic Fermi-level pinning (FLP) position toward the conduction band edge. This work focuses on studying the origin of the FLP alleviation. Investigations on both the electrical properties and interfacial structures of TiN/Ge contacts showed that an amorphous interlayer (IL) containing nitrogen played an important role in the alleviation. For comparison, the properties of Ti/Ge contacts were also studied. Based on these results, the IL structure that induced the FLP alleviation was clearly shown and a model was proposed to explain the FLP alleviation.
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U2 - 10.1063/1.4870510
DO - 10.1063/1.4870510
M3 - Article
AN - SCOPUS:84898078104
SN - 0003-6951
VL - 104
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 13
M1 - 132109
ER -