TY - JOUR
T1 - Robust and Electrically Conductive ZnO Thin Films and Nanostructures
T2 - Their Applications in Thermally and Chemically Harsh Environments
AU - Yan, Ruolin
AU - Takahashi, Tsunaki
AU - Zeng, Hao
AU - Hosomi, Takuro
AU - Kanai, Masaki
AU - Zhang, Guozhu
AU - Nagashima, Kazuki
AU - Yanagida, Takeshi
N1 - Funding Information:
This work was supported by KAKENHI (Grant Numbers: JP20H02208, JP18H01831, JP18H05243, and JP18KK0112). T.T. was supported by JST PREST Grant Number JPMJPR19M6, Japan. T.T., G.Z., K.N., and T.Y. were supported by JST CREST (Grant Number JPMJCR19I2, Japan). T.Y. and K.N. were supported by the CAS-JSPS Joint Research Projects (Grant Number JPJSBP120187207) and Mirai R&D of JST. R.Y. was supported by the program of the China Scholarships Council (No. 201706090261). This work was performed under the Cooperative Research Program of the “Network Joint Research Center for Materials and Devices” and the MEXT Project of “Integrated Research Consortium on Chemical Sciences”.
Publisher Copyright:
© 2021 ACS Applied Electronic Materials. All rights reserved.
PY - 2021/7/27
Y1 - 2021/7/27
N2 - "Harsh electronics", which are designed to operate under harsh environments, have garnered significant attention to collect various physical and chemical information in surroundings toward the Internet of Things era. Among various electronic materials and structures, ZnO thin films, which consist of an abundant resource, have been intensively investigated because of their unique electrical and optical properties. However, ZnO thin films have been regarded as chemically nonresistive to harsh environments (e.g., high temperatures, high humidity, and acidic and basic conditions). Herein, we present recent progress and advances in electrically conductive ZnO thin films and nanostructures for applications in harsh electronics. First, various fabrication methods and progresses for achieving high-quality ZnO nanomaterials are introduced. Subsequently, previously reported approaches for enhancing the reliability and stability of ZnO nanostructures in harsh electronics are compared. Strategies for fabricating robust ZnO materials and ZnO-based electronics are discussed on the basis of several proposed mechanisms. Finally, we describe the current limitation, perspective, and outlook for future developments of ZnO nanostructures for use in harsh electronics.
AB - "Harsh electronics", which are designed to operate under harsh environments, have garnered significant attention to collect various physical and chemical information in surroundings toward the Internet of Things era. Among various electronic materials and structures, ZnO thin films, which consist of an abundant resource, have been intensively investigated because of their unique electrical and optical properties. However, ZnO thin films have been regarded as chemically nonresistive to harsh environments (e.g., high temperatures, high humidity, and acidic and basic conditions). Herein, we present recent progress and advances in electrically conductive ZnO thin films and nanostructures for applications in harsh electronics. First, various fabrication methods and progresses for achieving high-quality ZnO nanomaterials are introduced. Subsequently, previously reported approaches for enhancing the reliability and stability of ZnO nanostructures in harsh electronics are compared. Strategies for fabricating robust ZnO materials and ZnO-based electronics are discussed on the basis of several proposed mechanisms. Finally, we describe the current limitation, perspective, and outlook for future developments of ZnO nanostructures for use in harsh electronics.
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U2 - 10.1021/acsaelm.1c00428
DO - 10.1021/acsaelm.1c00428
M3 - Review article
AN - SCOPUS:85111570041
SN - 2637-6113
VL - 3
SP - 2925
EP - 2940
JO - ACS Applied Electronic Materials
JF - ACS Applied Electronic Materials
IS - 7
ER -