Rigidity enhancement of GeO2 by y doping for reliable Ge gate stacks

Tomonori Nishimura; Xiaoyu Tang; Takeaki Yajima; Akira Toriumi

doi:10.1109/EDTM.2018.8421529

Rigidity enhancement of GeO₂ by y doping for reliable Ge gate stacks

Tomonori Nishimura, Xiaoyu Tang, Takeaki Yajima, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The poor reliability of GeO₂/Ge stack is improved by appropriate cation (e.g. Sc or Y) doping into GeO₂ and it is considered to be thanks to the enhancement of GeO₂ network rigidity. We discuss the impact of cation doping on structural modulation of GeO₂ on Ge substrate in the thermal treatment. By doping a small amount of Y into GeO₂, the crystallization of GeO₂ from amorphous to α-quartz structure is efficiently suppressed. It is a direct evidence of modulation of GeO₂ network rigidity by the cation doping.

Original language	English
Title of host publication	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	196-198
Number of pages	3
ISBN (Print)	9781538637111
DOIs	https://doi.org/10.1109/EDTM.2018.8421529
Publication status	Published - Jul 26 2018
Externally published	Yes
Event	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan Duration: Mar 13 2018 → Mar 16 2018

Publication series

Name	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Other

Other	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Country/Territory	Japan
City	Kobe
Period	3/13/18 → 3/16/18

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDTM.2018.8421529

Cite this

Nishimura, T., Tang, X., Yajima, T., & Toriumi, A. (2018). Rigidity enhancement of GeO₂ by y doping for reliable Ge gate stacks. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 196-198). Article 8421529 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421529

Rigidity enhancement of GeO₂ by y doping for reliable Ge gate stacks. / Nishimura, Tomonori; Tang, Xiaoyu; Yajima, Takeaki et al.
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 196-198 8421529 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nishimura, T, Tang, X, Yajima, T & Toriumi, A 2018, Rigidity enhancement of GeO₂ by y doping for reliable Ge gate stacks. in 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings., 8421529, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 196-198, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, Japan, 3/13/18. https://doi.org/10.1109/EDTM.2018.8421529

Nishimura T, Tang X, Yajima T, Toriumi A. Rigidity enhancement of GeO₂ by y doping for reliable Ge gate stacks. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 196-198. 8421529. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). doi: 10.1109/EDTM.2018.8421529

Nishimura, Tomonori ; Tang, Xiaoyu ; Yajima, Takeaki et al. / Rigidity enhancement of GeO₂ by y doping for reliable Ge gate stacks. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 196-198 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

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abstract = "The poor reliability of GeO2/Ge stack is improved by appropriate cation (e.g. Sc or Y) doping into GeO2 and it is considered to be thanks to the enhancement of GeO2 network rigidity. We discuss the impact of cation doping on structural modulation of GeO2 on Ge substrate in the thermal treatment. By doping a small amount of Y into GeO2, the crystallization of GeO2 from amorphous to α-quartz structure is efficiently suppressed. It is a direct evidence of modulation of GeO2 network rigidity by the cation doping.",

author = "Tomonori Nishimura and Xiaoyu Tang and Takeaki Yajima and Akira Toriumi",

note = "Funding Information: This work was supported by grant F/00-180/A from the Leverhulme Trust. Publisher Copyright: {\textcopyright} 2018 IEEE.; 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",

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