Rigidity Enhancement of GeO2 by Y-Doping for Reliable Ge Gate Stacks

Tomonori Nishimura, Xiaoyu Tang, Cimang Lu, Takeaki Yajima, Akira Toriumi

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


The poor reliability of the GeO2/Ge stack is improved by appropriate cation doping [e.g., Yttrium (Y)-doping] into amorphous GeO2 as a result of the enhancement of the GeO2 network structure stability. In this paper, we discuss the impact of Y-doping on structural modulation of GeO2 on a Ge substrate in thermal treatment. By doping a small amount of Y into amorphous GeO2, the crystallization of GeO2 to alpha -quartz and alpha -cristobalite structures is efficiently suppressed without toughening the local Ge-O bond. This is direct evidence of rigidity enhancement of the GeO2 tetrahedral network structure by cation doping.

Original languageEnglish
Article number8491298
Pages (from-to)1212-1217
Number of pages6
JournalIEEE Journal of the Electron Devices Society
Publication statusPublished - 2018
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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