Reversible electromigration of thallium adatoms on the Si(1 1 1) surface

Anton Visikovskiy, Seigi Mizuno, Hiroshi Tochihara

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


By means of low-energy electron diffraction (LEED), we found a reversible structural change of (1 × 1) ↔ (sqrt(3) × sqrt(3)) on thallium (Tl) adsorbed Si(1 1 1) surfaces by switching the polarity of applied DC voltage for heating the sample. It was shown in the literature that Tl adatoms are located on the T4 sites of the bulk-terminated surface both in the (1 × 1) and (sqrt(3) × sqrt(3)). It is clarified that the structural change is caused by the electromigration of the Tl adatoms. Tl atoms migrate towards the cathode, being induced by the electric field (10-20 V/cm). We discussed an atomic process of the electromigration.

Original languageEnglish
Pages (from-to)189-193
Number of pages5
JournalSurface Science
Issue number15
Publication statusPublished - Aug 1 2006

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


Dive into the research topics of 'Reversible electromigration of thallium adatoms on the Si(1 1 1) surface'. Together they form a unique fingerprint.

Cite this