TY - JOUR
T1 - Reverse bias voltage controlled burst-mode booster SOA in λ-tunable ONU transmitter for high-split-number TWDM-PON
AU - Taguchi, Katsuhisa
AU - Asaka, Kota
AU - Kimura, Shunji
AU - Suzuki, Ken Ichi
AU - Otaka, Akihiro
N1 - Funding Information:
A part of this work was supported by the Ministry of Internal Affairs and Communication (MIC) of Japan.
Publisher Copyright:
© 2009-2012 OSA.
PY - 2018/4
Y1 - 2018/4
N2 - This paper presents a λ-tunable optical network unit (ONU) burst-mode transmitter (B-Tx) with high output power and low burst-off-level power for high-splitnumber time and wavelength division multiplexing passive optical networks (TWDM-PONs). The proposed ONU B-Tx utilizes a burst-mode booster semiconductor optical amplifier (SOA) with a control technique for reverse bias voltage that creates an optical power absorption effect in the burstoff- level state. This paper introduces the design of the biasvoltage- state control circuit, simulations of control-circuit operation, evaluations of the static optical power-absorption effect, and burst-mode operation performance in the booster SOA operated by reverse bias voltage. High output power of over +7.4 dBm and low burst-off-level power of under -73.4 dBm 15 GHz are successfully achieved in all upstream channels. Crosstalk penalty measurements confirm a very low penalty of under 0.1 dB, which leads to a 256 splitnumber TWDM-PON.
AB - This paper presents a λ-tunable optical network unit (ONU) burst-mode transmitter (B-Tx) with high output power and low burst-off-level power for high-splitnumber time and wavelength division multiplexing passive optical networks (TWDM-PONs). The proposed ONU B-Tx utilizes a burst-mode booster semiconductor optical amplifier (SOA) with a control technique for reverse bias voltage that creates an optical power absorption effect in the burstoff- level state. This paper introduces the design of the biasvoltage- state control circuit, simulations of control-circuit operation, evaluations of the static optical power-absorption effect, and burst-mode operation performance in the booster SOA operated by reverse bias voltage. High output power of over +7.4 dBm and low burst-off-level power of under -73.4 dBm 15 GHz are successfully achieved in all upstream channels. Crosstalk penalty measurements confirm a very low penalty of under 0.1 dB, which leads to a 256 splitnumber TWDM-PON.
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U2 - 10.1364/JOCN.10.000431
DO - 10.1364/JOCN.10.000431
M3 - Article
AN - SCOPUS:85045647016
SN - 1943-0620
VL - 10
SP - 431
EP - 439
JO - Journal of Optical Communications and Networking
JF - Journal of Optical Communications and Networking
IS - 4
ER -