Resistive-switching memory effects of NiO nanowire/metal junctions

Keisuke Oka, Takeshi Yanagida, Kazuki Nagashima, Tomoji Kawai, Jin Soo Kim, Bae Ho Park

Research output: Contribution to journalArticlepeer-review

116 Citations (Scopus)


We have demonstrated the construction of highly stable resistive switching (RS) junctions with a metal/NiO nanowire/metal structure and used them to elucidate the crucial role of redox events in the nanoscale bipolar RS. The presented approaches utilizing oxide nanowire/metal junctions offer an important system and platform for investigating nanoscale RS mechanisms of various oxide materials.

Original languageEnglish
Pages (from-to)6634-6635
Number of pages2
JournalJournal of the American Chemical Society
Issue number19
Publication statusPublished - May 19 2010
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry


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