Resistive-switching memory effects of NiO nanowire/metal junctions

Keisuke Oka; Takeshi Yanagida; Kazuki Nagashima; Tomoji Kawai; Jin Soo Kim; Bae Ho Park

doi:10.1021/ja101742f

Resistive-switching memory effects of NiO nanowire/metal junctions

Keisuke Oka, Takeshi Yanagida, Kazuki Nagashima, Tomoji Kawai, Jin Soo Kim, Bae Ho Park

Research output: Contribution to journal › Article › peer-review

116 Citations (Scopus)

Abstract

We have demonstrated the construction of highly stable resistive switching (RS) junctions with a metal/NiO nanowire/metal structure and used them to elucidate the crucial role of redox events in the nanoscale bipolar RS. The presented approaches utilizing oxide nanowire/metal junctions offer an important system and platform for investigating nanoscale RS mechanisms of various oxide materials.

Original language	English
Pages (from-to)	6634-6635
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	132
Issue number	19
DOIs	https://doi.org/10.1021/ja101742f
Publication status	Published - May 19 2010
Externally published	Yes

All Science Journal Classification (ASJC) codes

Catalysis
Chemistry(all)
Biochemistry
Colloid and Surface Chemistry

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10.1021/ja101742f

Cite this

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abstract = "We have demonstrated the construction of highly stable resistive switching (RS) junctions with a metal/NiO nanowire/metal structure and used them to elucidate the crucial role of redox events in the nanoscale bipolar RS. The presented approaches utilizing oxide nanowire/metal junctions offer an important system and platform for investigating nanoscale RS mechanisms of various oxide materials.",

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AU - Oka, Keisuke

AU - Yanagida, Takeshi

AU - Nagashima, Kazuki

AU - Kawai, Tomoji

AU - Kim, Jin Soo

AU - Park, Bae Ho

PY - 2010/5/19

Y1 - 2010/5/19

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AB - We have demonstrated the construction of highly stable resistive switching (RS) junctions with a metal/NiO nanowire/metal structure and used them to elucidate the crucial role of redox events in the nanoscale bipolar RS. The presented approaches utilizing oxide nanowire/metal junctions offer an important system and platform for investigating nanoscale RS mechanisms of various oxide materials.

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Resistive-switching memory effects of NiO nanowire/metal junctions

Abstract

All Science Journal Classification (ASJC) codes

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