TY - JOUR
T1 - Reply to “Comment on ‘Molecular-dynamics simulations of solid-phase epitaxy of Si
T2 - Growth mechanisms’ ”
AU - Motooka, Teruaki
AU - Nishihira, Ken
AU - Munetoh, Shinji
AU - Moriguchi, Koji
AU - Shintani, Akira
PY - 2001
Y1 - 2001
N2 - We have investigated atomic diffusion properties near the amorphous/crystalline (formula presented) Si(001) interface during solid-phase epitaxy (SPE) of Si based on molecular-dynamics simulations using the Tersoff potential. It has been found that the mean-square displacement of the Si atoms in an amorphous layer with a thickness of 10 Å at the (formula presented) interface is larger than that in bulk amorphous Si. This can be attributed to local heating due to crystallization of amorphous Si during SPE growth.
AB - We have investigated atomic diffusion properties near the amorphous/crystalline (formula presented) Si(001) interface during solid-phase epitaxy (SPE) of Si based on molecular-dynamics simulations using the Tersoff potential. It has been found that the mean-square displacement of the Si atoms in an amorphous layer with a thickness of 10 Å at the (formula presented) interface is larger than that in bulk amorphous Si. This can be attributed to local heating due to crystallization of amorphous Si during SPE growth.
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U2 - 10.1103/PhysRevB.63.237402
DO - 10.1103/PhysRevB.63.237402
M3 - Article
AN - SCOPUS:0034895291
SN - 1098-0121
VL - 63
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 23
ER -