TY - GEN
T1 - Reliability of GaN-HEMTs for high-voltage switching applications
AU - Saito, Wataru
PY - 2011/6/23
Y1 - 2011/6/23
N2 - This paper reports that the maximum electric field is a dominant factor for reliability in high-voltage GaN-HEMTs. Four types of the GaN-HEMT with different field plate (FP) structures were tested in continuous switching operation mode to analyze the degradation mechanism and the optimal device design. From the on-resistance degradation dependence on the FP structure, we extract that the gate-edge electric field strongly affects the increase of the dynamic on-resistance. Although the FP-edge field also increased the dynamic on-resistance, its influence was weaker than that of the gate-edge field. The optimal FP structure minimizes the increase of the dynamic on-resistance by reducing the electric field peaks and showed no degradation of power efficiency at the boost converter operation.
AB - This paper reports that the maximum electric field is a dominant factor for reliability in high-voltage GaN-HEMTs. Four types of the GaN-HEMT with different field plate (FP) structures were tested in continuous switching operation mode to analyze the degradation mechanism and the optimal device design. From the on-resistance degradation dependence on the FP structure, we extract that the gate-edge electric field strongly affects the increase of the dynamic on-resistance. Although the FP-edge field also increased the dynamic on-resistance, its influence was weaker than that of the gate-edge field. The optimal FP structure minimizes the increase of the dynamic on-resistance by reducing the electric field peaks and showed no degradation of power efficiency at the boost converter operation.
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U2 - 10.1109/IRPS.2011.5784510
DO - 10.1109/IRPS.2011.5784510
M3 - Conference contribution
AN - SCOPUS:79959310904
SN - 9781424491117
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - 4E.1.1-4E.1.5
BT - 2011 International Reliability Physics Symposium, IRPS 2011
T2 - 49th International Reliability Physics Symposium, IRPS 2011
Y2 - 10 April 2011 through 14 April 2011
ER -