Reliability Improvement of superluminescent diodes emitting at 1.0 μm band using InGaAsP barrier structure

Engineering

• Gallium Arsenide 100%
• Barrier Layer 50%
• Indium Gallium Arsenide 50%
• Emitting Diode 50%
• Power Density 25%
• Output Power 25%
• Characteristics 25%
• Wavelength 25%
• Reliability 25%
• Power Control 25%
• Active Region 25%
• Broad Band 25%
• Reliability Improvement 25%
• Reliability Evaluation 25%

Physics

• Optical Power 75%
• Surface Properties 50%
• Degradation 50%
• Reliability 25%
• Broadband 25%

Material Science

• Devices 100%