Abstract
A selective-area impurity-doped planar edge-coupled waveguide photodiode (SIMPLE-WGPD) has a long lifetime for subscriber system use and the device life is determined by the perimeter of the pn-junction. The thickness of the absorption layer is 3 μm. The pn-junction is formed at the absorption layer by means of Zn diffusion from the surface. The facet at which the input light received is formed by cleavage and coated with SiN, filmed formed by plasma enhanced chemical vapor deposition. The responsivity is about 0.8 A/W at bias of -2 V. On these SIMPLE-WGPDs, several kinds of reliability tests were performed.
| Original language | English |
|---|---|
| Pages | 143 |
| Number of pages | 1 |
| Publication status | Published - 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1997 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim - Chiba, Jpn Duration: Jul 14 1997 → Jul 18 1997 |
Other
| Other | Proceedings of the 1997 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim |
|---|---|
| City | Chiba, Jpn |
| Period | 7/14/97 → 7/18/97 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering