Relaxation process of ion irradiation defects in IV-semiconductors

Y. Murakami; M. Miyata; A. Kenjo; T. Sadoh; M. Miyao

doi:10.1016/S0921-5107(02)00620-7

Relaxation process of ion irradiation defects in IV-semiconductors

Y. Murakami
, M. Miyata
, A. Kenjo
, T. Sadoh
, M. Miyao

Electronic Devices

Research output: Contribution to journal › Conference article › peer-review

Abstract

Relaxation process of ion irradiation defects in IV-semiconductors (Si, Si_0.85Ge_0.15, Ge, and heavily P-doped ( ∼ 10 ²⁰ cm^-3) n⁺-Si) was investigated. The IV-semiconductors were irradiated with 25 keV Ar⁺ ions (dose: 1 × 10¹³-1 × 10¹⁶ cm^-2, dose rate: 3 × 10¹¹-6 × 10¹² cm^-2 s ^-1, temperature: 25-250 °C). Amorphicity was comprehensively evaluated by using spectroscopic ellipsometry. For samples irradiated at temperatures around 100 °C, dose rate dependence of amorphicity was remarkably observed. The Arrhenius plot of critical dose rate, at which defect generation and annihilation rates were balanced, showed that activation energies for defect relaxation process were 0.43, 0.51, 0.88, and 0.18 eV for Si, Si_0.85Ge_0.15, Ge, and n⁺-Si, respectively. These results suggest that defect relaxation process is governed by migration of V⁰ in Si, Si_0.85Ge_0.15, and Ge, while V ^2- in n⁺-Si. The migration energy of V⁰ in Si_0.85Ge_0.15 obeys the Vegard's law.

Original language	English
Pages (from-to)	362-365
Number of pages	4
Journal	Materials Science and Engineering: B
Volume	102
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(02)00620-7
Publication status	Published - Sept 15 2003
Event	E-MRS 2002 Symposium E - Strasbourg, France Duration: Jun 18 2002 → Jun 21 2002

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S0921-5107(02)00620-7

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@article{3c4d7aae173a4730a54fcc642bbe907c,

title = "Relaxation process of ion irradiation defects in IV-semiconductors",

abstract = "Relaxation process of ion irradiation defects in IV-semiconductors (Si, Si0.85Ge0.15, Ge, and heavily P-doped ( ∼ 10 20 cm-3) n+-Si) was investigated. The IV-semiconductors were irradiated with 25 keV Ar+ ions (dose: 1 × 1013-1 × 1016 cm-2, dose rate: 3 × 1011-6 × 1012 cm-2 s -1, temperature: 25-250 °C). Amorphicity was comprehensively evaluated by using spectroscopic ellipsometry. For samples irradiated at temperatures around 100 °C, dose rate dependence of amorphicity was remarkably observed. The Arrhenius plot of critical dose rate, at which defect generation and annihilation rates were balanced, showed that activation energies for defect relaxation process were 0.43, 0.51, 0.88, and 0.18 eV for Si, Si0.85Ge0.15, Ge, and n+-Si, respectively. These results suggest that defect relaxation process is governed by migration of V0 in Si, Si0.85Ge0.15, and Ge, while V 2- in n+-Si. The migration energy of V0 in Si0.85Ge0.15 obeys the Vegard's law.",

author = "Y. Murakami and M. Miyata and A. Kenjo and T. Sadoh and M. Miyao",

note = "Funding Information: A part of this work was supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science, and Technology of Japan. We are very grateful to Dr K. Oda of the Central Research Laboratory, Hitachi Ltd., and Dr K. Satoh of the Mitsubishi Electric Corporation for offering epitaxially grown SiGe, and heavily doped Si samples, respectively, and valuable discussions.; E-MRS 2002 Symposium E ; Conference date: 18-06-2002 Through 21-06-2002",

year = "2003",

month = sep,

day = "15",

doi = "10.1016/S0921-5107(02)00620-7",

language = "English",

volume = "102",

pages = "362--365",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

publisher = "Elsevier Ltd",

number = "1-3",

}

TY - JOUR

T1 - Relaxation process of ion irradiation defects in IV-semiconductors

AU - Murakami, Y.

AU - Miyata, M.

AU - Kenjo, A.

AU - Sadoh, T.

AU - Miyao, M.

N1 - Funding Information: A part of this work was supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science, and Technology of Japan. We are very grateful to Dr K. Oda of the Central Research Laboratory, Hitachi Ltd., and Dr K. Satoh of the Mitsubishi Electric Corporation for offering epitaxially grown SiGe, and heavily doped Si samples, respectively, and valuable discussions.

PY - 2003/9/15

Y1 - 2003/9/15

N2 - Relaxation process of ion irradiation defects in IV-semiconductors (Si, Si0.85Ge0.15, Ge, and heavily P-doped ( ∼ 10 20 cm-3) n+-Si) was investigated. The IV-semiconductors were irradiated with 25 keV Ar+ ions (dose: 1 × 1013-1 × 1016 cm-2, dose rate: 3 × 1011-6 × 1012 cm-2 s -1, temperature: 25-250 °C). Amorphicity was comprehensively evaluated by using spectroscopic ellipsometry. For samples irradiated at temperatures around 100 °C, dose rate dependence of amorphicity was remarkably observed. The Arrhenius plot of critical dose rate, at which defect generation and annihilation rates were balanced, showed that activation energies for defect relaxation process were 0.43, 0.51, 0.88, and 0.18 eV for Si, Si0.85Ge0.15, Ge, and n+-Si, respectively. These results suggest that defect relaxation process is governed by migration of V0 in Si, Si0.85Ge0.15, and Ge, while V 2- in n+-Si. The migration energy of V0 in Si0.85Ge0.15 obeys the Vegard's law.

AB - Relaxation process of ion irradiation defects in IV-semiconductors (Si, Si0.85Ge0.15, Ge, and heavily P-doped ( ∼ 10 20 cm-3) n+-Si) was investigated. The IV-semiconductors were irradiated with 25 keV Ar+ ions (dose: 1 × 1013-1 × 1016 cm-2, dose rate: 3 × 1011-6 × 1012 cm-2 s -1, temperature: 25-250 °C). Amorphicity was comprehensively evaluated by using spectroscopic ellipsometry. For samples irradiated at temperatures around 100 °C, dose rate dependence of amorphicity was remarkably observed. The Arrhenius plot of critical dose rate, at which defect generation and annihilation rates were balanced, showed that activation energies for defect relaxation process were 0.43, 0.51, 0.88, and 0.18 eV for Si, Si0.85Ge0.15, Ge, and n+-Si, respectively. These results suggest that defect relaxation process is governed by migration of V0 in Si, Si0.85Ge0.15, and Ge, while V 2- in n+-Si. The migration energy of V0 in Si0.85Ge0.15 obeys the Vegard's law.

UR - https://www.scopus.com/pages/publications/0042011609

UR - https://www.scopus.com/pages/publications/0042011609#tab=citedBy

U2 - 10.1016/S0921-5107(02)00620-7

DO - 10.1016/S0921-5107(02)00620-7

M3 - Conference article

AN - SCOPUS:0042011609

SN - 0921-5107

VL - 102

SP - 362

EP - 365

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1-3

T2 - E-MRS 2002 Symposium E

Y2 - 18 June 2002 through 21 June 2002

ER -

Relaxation process of ion irradiation defects in IV-semiconductors

Abstract

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