This paper reports that the unclamped inductive switching (UIS) withstanding capability of high voltage GaN-HEMTs depends on the gate leakage current. The relation between the UIS withstanding capability and the gate leakage current is discussed by the results of the UIS test for GaN-HEMTs with a p-type gate structure. Conclusively, the relation between the UIS withstanding capability and the crystal defect density around the gate for the GaN-HEMT was clarified.
|Number of pages||4|
|Journal||Proceedings of the International Symposium on Power Semiconductor Devices and ICs|
|Publication status||Published - Jan 1 2017|
|Event||29th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2017 - Sapporo, Japan|
Duration: May 28 2017 → Jun 1 2017
All Science Journal Classification (ASJC) codes