Abstract
This paper reports that the unclamped inductive switching (UIS) withstanding capability of high voltage GaN-HEMTs depends on the gate leakage current. The relation between the UIS withstanding capability and the gate leakage current is discussed by the results of the UIS test for GaN-HEMTs with a p-type gate structure. Conclusively, the relation between the UIS withstanding capability and the crystal defect density around the gate for the GaN-HEMT was clarified.
| Original language | English |
|---|---|
| Article number | 7988922 |
| Pages (from-to) | 199-202 |
| Number of pages | 4 |
| Journal | Proceedings of the International Symposium on Power Semiconductor Devices and ICs |
| DOIs | |
| Publication status | Published - Jan 1 2017 |
| Externally published | Yes |
| Event | 29th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2017 - Sapporo, Japan Duration: May 28 2017 → Jun 1 2017 |
All Science Journal Classification (ASJC) codes
- Engineering(all)