Reduction of contact resistance on AlGaN/GaN HEMT structures introducing uneven AlGaN layers

Yusuke Takei; Masayuki Kamiya; Kazuo Tsutsui; Wataru Saito; Kuniyuki Kakushima; Hitoshi Wakabayashi; Yoshinori Kataoka; Hiroshi Iwai

doi:10.1002/pssa.201431645

Reduction of contact resistance on AlGaN/GaN HEMT structures introducing uneven AlGaN layers

Yusuke Takei, Masayuki Kamiya, Kazuo Tsutsui, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka, Hiroshi Iwai

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A new technique to reduce contact resistance on AlGaN/GaN HEMTs was proposed. This method introduced uneven AlGaN layer structures. 2D device simulations revealed a clear increase in two-dimensional electron gas (2DEG) concentration near the edge regions where the AlGaN layer thickness fluctuated. This fringing effect is useful because metal and high-density 2DEG can approach each other, overcoming an inherent tradeoff involving the AlGaN layer thickness. Experiments demonstrated the effectiveness of this technique, in which contact resistances obtained on some structures with uneven AlGaN layers were lower than the lowest limit for conventional flat AlGaN structures.

Original language	English
Pages (from-to)	1104-1109
Number of pages	6
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	212
Issue number	5
DOIs	https://doi.org/10.1002/pssa.201431645
Publication status	Published - May 1 2015
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1002/pssa.201431645

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title = "Reduction of contact resistance on AlGaN/GaN HEMT structures introducing uneven AlGaN layers",

abstract = "A new technique to reduce contact resistance on AlGaN/GaN HEMTs was proposed. This method introduced uneven AlGaN layer structures. 2D device simulations revealed a clear increase in two-dimensional electron gas (2DEG) concentration near the edge regions where the AlGaN layer thickness fluctuated. This fringing effect is useful because metal and high-density 2DEG can approach each other, overcoming an inherent tradeoff involving the AlGaN layer thickness. Experiments demonstrated the effectiveness of this technique, in which contact resistances obtained on some structures with uneven AlGaN layers were lower than the lowest limit for conventional flat AlGaN structures.",

author = "Yusuke Takei and Masayuki Kamiya and Kazuo Tsutsui and Wataru Saito and Kuniyuki Kakushima and Hitoshi Wakabayashi and Yoshinori Kataoka and Hiroshi Iwai",

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T1 - Reduction of contact resistance on AlGaN/GaN HEMT structures introducing uneven AlGaN layers

AU - Takei, Yusuke

AU - Kamiya, Masayuki

AU - Tsutsui, Kazuo

AU - Saito, Wataru

AU - Kakushima, Kuniyuki

AU - Wakabayashi, Hitoshi

AU - Kataoka, Yoshinori

AU - Iwai, Hiroshi

PY - 2015/5/1

Y1 - 2015/5/1

N2 - A new technique to reduce contact resistance on AlGaN/GaN HEMTs was proposed. This method introduced uneven AlGaN layer structures. 2D device simulations revealed a clear increase in two-dimensional electron gas (2DEG) concentration near the edge regions where the AlGaN layer thickness fluctuated. This fringing effect is useful because metal and high-density 2DEG can approach each other, overcoming an inherent tradeoff involving the AlGaN layer thickness. Experiments demonstrated the effectiveness of this technique, in which contact resistances obtained on some structures with uneven AlGaN layers were lower than the lowest limit for conventional flat AlGaN structures.

AB - A new technique to reduce contact resistance on AlGaN/GaN HEMTs was proposed. This method introduced uneven AlGaN layer structures. 2D device simulations revealed a clear increase in two-dimensional electron gas (2DEG) concentration near the edge regions where the AlGaN layer thickness fluctuated. This fringing effect is useful because metal and high-density 2DEG can approach each other, overcoming an inherent tradeoff involving the AlGaN layer thickness. Experiments demonstrated the effectiveness of this technique, in which contact resistances obtained on some structures with uneven AlGaN layers were lower than the lowest limit for conventional flat AlGaN structures.

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Reduction of contact resistance on AlGaN/GaN HEMT structures introducing uneven AlGaN layers

Abstract

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