Recombination mechanism in low-dimensional nitride semiconductors

Yoichi Kawakami, Akio Kaneta, Koichi Okamoto, Tsutomu Inoue, Fuminori Satou, Yoshihito Narita, Fritz Henneberger, Giichi Marutsuki, Yukio Narukawa, Takashi Mukai, Shigeo Fujita

Research output: Contribution to journalConference articlepeer-review


Scanning near field optical microscopy (SNOM) has been developed to assess the recombination mechanism in low-dimensional nitride semiconductors by employing spatial and temporal photoluminescence (PL) mapping under illumination-collection at cryogenic temperatures. The near-field PL images taken at an InxGa1-xN single-quantum-well (SQW) structure revealed the variation of both intensity and peak energy according to the probing location with the scale less than a few tens of a nanometer. The PL, the linewidth of which was about 60meV in macroscopic measurements, was separated into several peaks with the linewidth of about 12 meV if the SNOM-PL was taken with the aperture size of 30 nm. Clear spatial correlation was observed between PL intensity and PL peak-photon-energy, where the regions of strong PL intensity correspond to those of low PL peak-photon-energy. Time-resolved SNOM-PL study showed the important role of exciton/carrier localization in the recombination mechanism in InxGa 1-xN-based quantum structures.

Original languageEnglish
Pages (from-to)575-588
Number of pages14
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 2003
Externally publishedYes
EventPROCEEDINGS OF SPIE SPIE - The International Society for Optical Engineering: Physics and Simulation of Optoelectronic Devices XI - San Jose, CA, United States
Duration: Jan 27 2003Jan 31 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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