Recombination-enhanced migration of interstitial iron in silicon

H. Nakashima, T. Sadoh, T. Tsurushima

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


Recombination-enhanced migration of interstitial iron (Fei) in the vicinity of substitutional boron (Bs) has been investigated by using space charge technique combined with minority-carrier injection below 200 K. Four electron-traps and a hole-trap are observed as the structurally metastable Fei-Bs pairs after the injection. The creation and annihilation behaviors of these pairs by the injection are shown and discussed on the basis of the theory of the recombination-enhanced defect reaction.

Original languageEnglish
Pages (from-to)1351-1356
Number of pages6
JournalMaterials Science Forum
Issue numberpt 3
Publication statusPublished - 1995
EventProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
Duration: Jul 23 1995Jul 28 1995

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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