Recent progress of SiC hot-wall epitaxy and its modeling

Shin Ichi Nishizawa, Michel Pons

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


From the engineering point of view, SiC hot-wall epitaxy is a very important process in SiC semiconductor processes. There are lots of experimental reports on SiC hot-wall epitaxy. They discussed the growth rate, surface morphology, doping concentration, etc. Recently, the effect of face polarity is also made clear. However, each report mentioned the particular results that strongly depend on the experimental conditions and reactor design. In addition, the discussion with inlet condition such as source gas C/Si ratio, not the depositing surface condition, leads to the confusion. In order to understand and try to design and optimize the hot-wall CVD reactor, a numerical approach is attempted. The authors have tried to make it clear that depositing surface condition might be a universal parameter of SiC CVD, and the numerical simulation could predict the growth rate, surface morphology and doping concentration by taking account of the depositing surface condition. In this study, at first, the recent progress of SiC hot-wall epitaxy in experiment is summarized. Then, the present status of its numerical modeling is explained.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
PublisherTrans Tech Publications Ltd
Number of pages8
EditionPART 1
ISBN (Print)9780878494255
Publication statusPublished - 2006
Externally publishedYes
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sept 18 2005Sept 23 2005

Publication series

NameMaterials Science Forum
NumberPART 1
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752


OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
Country/TerritoryUnited States
CityPittsburgh, PA

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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