Real-time resistive switching of Cu/MoOx ReRAM observed in transmission electron microscope

Masaki Kudo, Yuuki Ohno, Takahiro Hiroi, Takashi Fujimoto, Kouichi Hamada, Masashi Arita, Yasuo Takahashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


Inner-structural changes of a Cu/MoOx ReRAM was observed by in-situ TEM during the resistive switching. We succeeded for the first time to observe the structure changes in the continuous multiple resistive switching cycles. Cu-rich filament was formed in the MoOx layer during the SET process with positive voltage to the Cu electrode, and disappeared by negative voltage in the RESET process. It was also confirmed that thick filaments were generated when the current compliance for the SET process was increased. The most meaningful phenomenon is that the position of the filament changed at each SET process.

Original languageEnglish
Title of host publication2014 Silicon Nanoelectronics Workshop, SNW 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479956777
Publication statusPublished - Dec 4 2015
Externally publishedYes
EventSilicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States
Duration: Jun 8 2014Jun 9 2014

Publication series

Name2014 Silicon Nanoelectronics Workshop, SNW 2014


ConferenceSilicon Nanoelectronics Workshop, SNW 2014
Country/TerritoryUnited States

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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