Real-time resistive switching of Cu/MoOx ReRAM observed in transmission electron microscope

Masaki Kudo; Yuuki Ohno; Takahiro Hiroi; Takashi Fujimoto; Kouichi Hamada; Masashi Arita; Yasuo Takahashi

doi:10.1109/SNW.2014.7348556

Real-time resistive switching of Cu/MoOx ReRAM observed in transmission electron microscope

Masaki Kudo, Yuuki Ohno, Takahiro Hiroi, Takashi Fujimoto, Kouichi Hamada, Masashi Arita, Yasuo Takahashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Inner-structural changes of a Cu/MoOx ReRAM was observed by in-situ TEM during the resistive switching. We succeeded for the first time to observe the structure changes in the continuous multiple resistive switching cycles. Cu-rich filament was formed in the MoOx layer during the SET process with positive voltage to the Cu electrode, and disappeared by negative voltage in the RESET process. It was also confirmed that thick filaments were generated when the current compliance for the SET process was increased. The most meaningful phenomenon is that the position of the filament changed at each SET process.

Original language	English
Title of host publication	2014 Silicon Nanoelectronics Workshop, SNW 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479956777
DOIs	https://doi.org/10.1109/SNW.2014.7348556
Publication status	Published - Dec 4 2015
Externally published	Yes
Event	Silicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States Duration: Jun 8 2014 → Jun 9 2014

Publication series

Name	2014 Silicon Nanoelectronics Workshop, SNW 2014

Conference

Conference	Silicon Nanoelectronics Workshop, SNW 2014
Country/Territory	United States
City	Honolulu
Period	6/8/14 → 6/9/14

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/SNW.2014.7348556

Cite this

Kudo, M., Ohno, Y., Hiroi, T., Fujimoto, T., Hamada, K., Arita, M., & Takahashi, Y. (2015). Real-time resistive switching of Cu/MoOx ReRAM observed in transmission electron microscope. In 2014 Silicon Nanoelectronics Workshop, SNW 2014 Article 7348556 (2014 Silicon Nanoelectronics Workshop, SNW 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2014.7348556

Real-time resistive switching of Cu/MoOx ReRAM observed in transmission electron microscope. / Kudo, Masaki; Ohno, Yuuki; Hiroi, Takahiro et al.
2014 Silicon Nanoelectronics Workshop, SNW 2014. Institute of Electrical and Electronics Engineers Inc., 2015. 7348556 (2014 Silicon Nanoelectronics Workshop, SNW 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kudo, M, Ohno, Y, Hiroi, T, Fujimoto, T, Hamada, K, Arita, M & Takahashi, Y 2015, Real-time resistive switching of Cu/MoOx ReRAM observed in transmission electron microscope. in 2014 Silicon Nanoelectronics Workshop, SNW 2014., 7348556, 2014 Silicon Nanoelectronics Workshop, SNW 2014, Institute of Electrical and Electronics Engineers Inc., Silicon Nanoelectronics Workshop, SNW 2014, Honolulu, United States, 6/8/14. https://doi.org/10.1109/SNW.2014.7348556

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title = "Real-time resistive switching of Cu/MoOx ReRAM observed in transmission electron microscope",

abstract = "Inner-structural changes of a Cu/MoOx ReRAM was observed by in-situ TEM during the resistive switching. We succeeded for the first time to observe the structure changes in the continuous multiple resistive switching cycles. Cu-rich filament was formed in the MoOx layer during the SET process with positive voltage to the Cu electrode, and disappeared by negative voltage in the RESET process. It was also confirmed that thick filaments were generated when the current compliance for the SET process was increased. The most meaningful phenomenon is that the position of the filament changed at each SET process.",

author = "Masaki Kudo and Yuuki Ohno and Takahiro Hiroi and Takashi Fujimoto and Kouichi Hamada and Masashi Arita and Yasuo Takahashi",

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doi = "10.1109/SNW.2014.7348556",

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AU - Kudo, Masaki

AU - Ohno, Yuuki

AU - Hiroi, Takahiro

AU - Fujimoto, Takashi

AU - Hamada, Kouichi

AU - Arita, Masashi

AU - Takahashi, Yasuo

PY - 2015/12/4

Y1 - 2015/12/4

N2 - Inner-structural changes of a Cu/MoOx ReRAM was observed by in-situ TEM during the resistive switching. We succeeded for the first time to observe the structure changes in the continuous multiple resistive switching cycles. Cu-rich filament was formed in the MoOx layer during the SET process with positive voltage to the Cu electrode, and disappeared by negative voltage in the RESET process. It was also confirmed that thick filaments were generated when the current compliance for the SET process was increased. The most meaningful phenomenon is that the position of the filament changed at each SET process.

AB - Inner-structural changes of a Cu/MoOx ReRAM was observed by in-situ TEM during the resistive switching. We succeeded for the first time to observe the structure changes in the continuous multiple resistive switching cycles. Cu-rich filament was formed in the MoOx layer during the SET process with positive voltage to the Cu electrode, and disappeared by negative voltage in the RESET process. It was also confirmed that thick filaments were generated when the current compliance for the SET process was increased. The most meaningful phenomenon is that the position of the filament changed at each SET process.

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PB - Institute of Electrical and Electronics Engineers Inc.

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Real-time resistive switching of Cu/MoOx ReRAM observed in transmission electron microscope

Abstract

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