Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy

R. S. Kern, S. Tanaka, L. B. Rowland, R. F. Davis

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7 Citations (Scopus)


Thin films of silicon carbide (SiC) have been grown at 1000-1500°C on vicinal and on-axis α(6H)-SiC(0 0 0 1) substrates by gas-source molecular-beam epitaxy (GSMBE). Growth on on-axis and off-axis 6H-SiC(0 0 0 1) substrates using the SiH4-C2H4 system resulted in 3C-SiC(1 1 1) epilayers under all conditions of reactant gas flow and temperature. By adding H2 to the SiH4-C2H4 system, films of 6H-SiC(0 0 0 1) were deposited on vicinal 6H-SiC substrates at deposition temperature ≥1350°C. Kinetic analysis of the deposition of 3C-SiC films with respect to reactant inputs and growth temperature is presented. From the data, the deposition of 3C-SiC appears to be surface-reaction-controlled. Reflection high-energy electron diffraction (RHEED) and high-resolution transmission electron microscopy (HRTEM) was used to determine the crystalline quality, surface character and epilayer polytype.

Original languageEnglish
Pages (from-to)581-593
Number of pages13
JournalJournal of Crystal Growth
Issue number4
Publication statusPublished - Feb 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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