TY - JOUR
T1 - Rational design of bio-inspired high-performance ambipolar organic semiconductor materials based on indigo and its derivatives
AU - Zhang, Shou Feng
AU - Chen, Xian Kai
AU - Fan, Jian Xun
AU - Ren, Ai Min
N1 - Funding Information:
This work was supported by the Natural Science Foundation of China (Nos. 21473071 , 21173099 and 20973078 ) and the Major State Basis Research Development Program (Grant 2013CB 834801 ).
Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.
PY - 2015/5/26
Y1 - 2015/5/26
N2 - Indigoids have received much attention as the candidates of sustainable ambipolar organic semiconductor. However, the low charge carrier mobilities extremely limit their practical applications. Therefore, in-depth understanding of their electronic-structure properties and rational molecular modifications are urgently required. Here, we propose a promising strategy to design ambipolar organic semiconductors based on indigo fragments. Moreover, we predicted the organic crystal structures by evolutionary algorithm combined with DFT-D method. Charge transport properties have been significantly improved for the designed molecules, such as narrower energy gaps, higher electron affinity, larger transfer integrals as well as much smaller reorganization energies for hole and electron. Thusly, remarkable ambipolar charge transport behavior has been predicted, for example, the charge carrier mobilities are up to μh/μe = 7.71/5.42 cm2 V-1 s-1 for NN-indigo-6,6′-2CN and μh/μe = 5.15/2.13 cm2 V-1 s-1 for C9-NN-indigo-6,6′-2CN respectively.
AB - Indigoids have received much attention as the candidates of sustainable ambipolar organic semiconductor. However, the low charge carrier mobilities extremely limit their practical applications. Therefore, in-depth understanding of their electronic-structure properties and rational molecular modifications are urgently required. Here, we propose a promising strategy to design ambipolar organic semiconductors based on indigo fragments. Moreover, we predicted the organic crystal structures by evolutionary algorithm combined with DFT-D method. Charge transport properties have been significantly improved for the designed molecules, such as narrower energy gaps, higher electron affinity, larger transfer integrals as well as much smaller reorganization energies for hole and electron. Thusly, remarkable ambipolar charge transport behavior has been predicted, for example, the charge carrier mobilities are up to μh/μe = 7.71/5.42 cm2 V-1 s-1 for NN-indigo-6,6′-2CN and μh/μe = 5.15/2.13 cm2 V-1 s-1 for C9-NN-indigo-6,6′-2CN respectively.
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U2 - 10.1016/j.orgel.2015.05.021
DO - 10.1016/j.orgel.2015.05.021
M3 - Article
AN - SCOPUS:84929991225
SN - 1566-1199
VL - 24
SP - 12
EP - 25
JO - Organic Electronics
JF - Organic Electronics
ER -