Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics

Taizoh Sadoh, Jong Hyeok Park, Rikuta Aoki, Masanobu Miyao

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13 Citations (Scopus)


Orientation-controlled large-grain (≥10 μm) crystal, i.e., quasi-single crystal, Ge-rich (≥50%) SiGe on insulator grown at low temperatures (≤300 °C) are desired for realization of high-performance flexible electronics. To achieve this, the Au-induced crystallization technique using a-SiGe/Au stacked structures has been developed. This enables formation of (111)-oriented large-grain (≥10 μm) Si1-xGex (x ≥ 0.5) crystals on insulating substrates at low temperatures (300 °C). The surface layers of the grown SiGe crystals have uniform lateral composition profiles. By using this technique, formation of quasi-single crystal Ge on flexible plastic sheets is demonstrated. This technique will be useful to realize highperformance flexible electronics.

Original languageEnglish
Article number03CB01
JournalJapanese journal of applied physics
Issue number3
Publication statusPublished - Mar 2016

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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