Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics

Taizoh Sadoh; Jong Hyeok Park; Rikuta Aoki; Masanobu Miyao

doi:10.1109/AM-FPD.2015.7173225

Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics

Taizoh Sadoh, Jong Hyeok Park, Rikuta Aoki, Masanobu Miyao

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Low-temperature (≤300°C) formation of orientation-controlled large-grain (≥10 μm) SiGe crystals on insulator is desired for realization of advanced flexible electronics. To achieve this, the Au-induced crystallization technique using a-SiGe/Au stacked structures has been developed. Consequently, (111)-oriented large-grain (>10 μm) SiGe crystals are achieved on insulating substrates at low temperatures (∼300°C). The grown SiGe crystals have uniform composition profiles. This technique will be useful to realize advanced flexible electronics.

Original language	English
Title of host publication	Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	143-146
Number of pages	4
ISBN (Electronic)	9784863484771
DOIs	https://doi.org/10.1109/AM-FPD.2015.7173225
Publication status	Published - Jul 30 2015
Event	22nd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2015 - Kyoto, Japan Duration: Jul 1 2015 → Jul 4 2015

Publication series

Name	Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Other

Other	22nd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2015
Country/Territory	Japan
City	Kyoto
Period	7/1/15 → 7/4/15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/AM-FPD.2015.7173225

Cite this

Sadoh, T., Park, J. H., Aoki, R., & Miyao, M. (2015). Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics. In Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 143-146). Article 7173225 (Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/AM-FPD.2015.7173225

Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics. / Sadoh, Taizoh; Park, Jong Hyeok; Aoki, Rikuta et al.
Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2015. p. 143-146 7173225 (Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sadoh, T, Park, JH, Aoki, R & Miyao, M 2015, Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics. in Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials., 7173225, Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Institute of Electrical and Electronics Engineers Inc., pp. 143-146, 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2015, Kyoto, Japan, 7/1/15. https://doi.org/10.1109/AM-FPD.2015.7173225

Sadoh T, Park JH, Aoki R, Miyao M. Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics. In Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc. 2015. p. 143-146. 7173225. (Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). doi: 10.1109/AM-FPD.2015.7173225

Sadoh, Taizoh ; Park, Jong Hyeok ; Aoki, Rikuta et al. / Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics. Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 143-146 (Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

@inproceedings{12fbd814632a4e34abf6757abb5644dd,

title = "Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics",

abstract = "Low-temperature (≤300°C) formation of orientation-controlled large-grain (≥10 μm) SiGe crystals on insulator is desired for realization of advanced flexible electronics. To achieve this, the Au-induced crystallization technique using a-SiGe/Au stacked structures has been developed. Consequently, (111)-oriented large-grain (>10 μm) SiGe crystals are achieved on insulating substrates at low temperatures (∼300°C). The grown SiGe crystals have uniform composition profiles. This technique will be useful to realize advanced flexible electronics.",

author = "Taizoh Sadoh and Park, {Jong Hyeok} and Rikuta Aoki and Masanobu Miyao",

note = "Publisher Copyright: {\textcopyright} 2015 JSAP.; 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2015 ; Conference date: 01-07-2015 Through 04-07-2015",

year = "2015",

month = jul,

day = "30",

doi = "10.1109/AM-FPD.2015.7173225",

language = "English",

series = "Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "143--146",

booktitle = "Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices",

address = "United States",

}

TY - GEN

T1 - Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics

AU - Sadoh, Taizoh

AU - Park, Jong Hyeok

AU - Aoki, Rikuta

AU - Miyao, Masanobu

PY - 2015/7/30

Y1 - 2015/7/30

N2 - Low-temperature (≤300°C) formation of orientation-controlled large-grain (≥10 μm) SiGe crystals on insulator is desired for realization of advanced flexible electronics. To achieve this, the Au-induced crystallization technique using a-SiGe/Au stacked structures has been developed. Consequently, (111)-oriented large-grain (>10 μm) SiGe crystals are achieved on insulating substrates at low temperatures (∼300°C). The grown SiGe crystals have uniform composition profiles. This technique will be useful to realize advanced flexible electronics.

AB - Low-temperature (≤300°C) formation of orientation-controlled large-grain (≥10 μm) SiGe crystals on insulator is desired for realization of advanced flexible electronics. To achieve this, the Au-induced crystallization technique using a-SiGe/Au stacked structures has been developed. Consequently, (111)-oriented large-grain (>10 μm) SiGe crystals are achieved on insulating substrates at low temperatures (∼300°C). The grown SiGe crystals have uniform composition profiles. This technique will be useful to realize advanced flexible electronics.

UR - http://www.scopus.com/inward/record.url?scp=84947999154&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84947999154&partnerID=8YFLogxK

U2 - 10.1109/AM-FPD.2015.7173225

DO - 10.1109/AM-FPD.2015.7173225

M3 - Conference contribution

AN - SCOPUS:84947999154

T3 - Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

SP - 143

EP - 146

BT - Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2015

Y2 - 1 July 2015 through 4 July 2015

ER -

Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this