Quantitative Discussion on Sensitivity to Terahertz Waves of Detectors Made of MOSFET and High-Electron Mobility Transistor

Engineering

• Models 66%
• Terahertz 66%
• Experiments 33%
• Characteristics 33%
• Detection 33%
• High Voltage 33%
• Sensing Performance 33%
• Quasistatic Condition 33%
• Circuit Model 33%
• Field Effect Transistors 33%

Physics

• High Electron Mobility Transistors 100%
• Model 66%
• Field Effect Transistor 66%
• Detection 33%