Quantitative Discussion on Sensitivity to Terahertz Waves of Detectors Made of MOSFET and High-Electron Mobility Transistor

Hiromu Kojima; Haruichi Kanaya; Tanemasa Asano

doi:10.1109/JAC-ECC48896.2019.9051237

Quantitative Discussion on Sensitivity to Terahertz Waves of Detectors Made of MOSFET and High-Electron Mobility Transistor

Hiromu Kojima, Haruichi Kanaya, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A newly developed circuit model is presented to describe detection characteristic of square law detectors made of an FET under non-quasistatic condition. Sensing performance calculated using formulae derived from the model agrees well with results of experiment carried out to detect 1.0 THz waves using InAs-channel high-electron mobility transistor (HEMT). The model predicts that HEMT offers much higher voltage sensitivity to terahertz waves than Si MOSFET even for miniaturized devices.

Original language	English
Title of host publication	Proceedings of the International Japan-Africa Conference on Electronics, Communications and Computations, JAC-ECC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	128-131
Number of pages	4
ISBN (Electronic)	9781728156170
DOIs	https://doi.org/10.1109/JAC-ECC48896.2019.9051237
Publication status	Published - Dec 2019
Event	7th International Japan-Africa Conference on Electronics, Communications and Computations, JAC-ECC 2019 - Alexandria, Egypt Duration: Dec 15 2019 → Dec 16 2019

Publication series

Name	Proceedings of the International Japan-Africa Conference on Electronics, Communications and Computations, JAC-ECC 2019

Conference

Conference	7th International Japan-Africa Conference on Electronics, Communications and Computations, JAC-ECC 2019
Country/Territory	Egypt
City	Alexandria
Period	12/15/19 → 12/16/19

All Science Journal Classification (ASJC) codes

Computer Networks and Communications
Computer Science Applications
Electrical and Electronic Engineering
Control and Optimization
Artificial Intelligence

Access to Document

10.1109/JAC-ECC48896.2019.9051237

Cite this

Kojima, H., Kanaya, H., & Asano, T. (2019). Quantitative Discussion on Sensitivity to Terahertz Waves of Detectors Made of MOSFET and High-Electron Mobility Transistor. In Proceedings of the International Japan-Africa Conference on Electronics, Communications and Computations, JAC-ECC 2019 (pp. 128-131). Article 9051237 (Proceedings of the International Japan-Africa Conference on Electronics, Communications and Computations, JAC-ECC 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/JAC-ECC48896.2019.9051237

Quantitative Discussion on Sensitivity to Terahertz Waves of Detectors Made of MOSFET and High-Electron Mobility Transistor. / Kojima, Hiromu; Kanaya, Haruichi ; Asano, Tanemasa.
Proceedings of the International Japan-Africa Conference on Electronics, Communications and Computations, JAC-ECC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 128-131 9051237 (Proceedings of the International Japan-Africa Conference on Electronics, Communications and Computations, JAC-ECC 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kojima, H, Kanaya, H & Asano, T 2019, Quantitative Discussion on Sensitivity to Terahertz Waves of Detectors Made of MOSFET and High-Electron Mobility Transistor. in Proceedings of the International Japan-Africa Conference on Electronics, Communications and Computations, JAC-ECC 2019., 9051237, Proceedings of the International Japan-Africa Conference on Electronics, Communications and Computations, JAC-ECC 2019, Institute of Electrical and Electronics Engineers Inc., pp. 128-131, 7th International Japan-Africa Conference on Electronics, Communications and Computations, JAC-ECC 2019, Alexandria, Egypt, 12/15/19. https://doi.org/10.1109/JAC-ECC48896.2019.9051237

Kojima H, Kanaya H , Asano T. Quantitative Discussion on Sensitivity to Terahertz Waves of Detectors Made of MOSFET and High-Electron Mobility Transistor. In Proceedings of the International Japan-Africa Conference on Electronics, Communications and Computations, JAC-ECC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 128-131. 9051237. (Proceedings of the International Japan-Africa Conference on Electronics, Communications and Computations, JAC-ECC 2019). doi: 10.1109/JAC-ECC48896.2019.9051237

Kojima, Hiromu ; Kanaya, Haruichi ; Asano, Tanemasa. / Quantitative Discussion on Sensitivity to Terahertz Waves of Detectors Made of MOSFET and High-Electron Mobility Transistor. Proceedings of the International Japan-Africa Conference on Electronics, Communications and Computations, JAC-ECC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 128-131 (Proceedings of the International Japan-Africa Conference on Electronics, Communications and Computations, JAC-ECC 2019).

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title = "Quantitative Discussion on Sensitivity to Terahertz Waves of Detectors Made of MOSFET and High-Electron Mobility Transistor",

abstract = "A newly developed circuit model is presented to describe detection characteristic of square law detectors made of an FET under non-quasistatic condition. Sensing performance calculated using formulae derived from the model agrees well with results of experiment carried out to detect 1.0 THz waves using InAs-channel high-electron mobility transistor (HEMT). The model predicts that HEMT offers much higher voltage sensitivity to terahertz waves than Si MOSFET even for miniaturized devices.",

author = "Hiromu Kojima and Haruichi Kanaya and Tanemasa Asano",

note = "Funding Information: This work is supported in part by CREST (No. JPMJCR1431) of Japan Science and Technology Agency. Publisher Copyright: {\textcopyright} 2019 IEEE.; 7th International Japan-Africa Conference on Electronics, Communications and Computations, JAC-ECC 2019 ; Conference date: 15-12-2019 Through 16-12-2019",

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Quantitative Discussion on Sensitivity to Terahertz Waves of Detectors Made of MOSFET and High-Electron Mobility Transistor

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