Pulsed laser deposition growth of ultra-wide bandgap GeO2 film and its optical properties

Gaofeng Deng, Katsuhiko Saito, Tooru Tanaka, Makoto Arita, Qixin Guo

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


In this paper, we report the direct growth of ultra-wide bandgap GeO2 film on the m-plane sapphire substrate by pulsed laser deposition. Raman scattering and x-ray diffraction measurements confirm that the obtained GeO2 film has a (001)-oriented rutile structure mixed with the amorphous phase, and the film has an out-of-plane strain of -0.28% along the c direction. Transmittance spectra and x-ray photoelectron spectroscopy measurements determine that the transparent GeO2 film has an ultra-wide bandgap of about 5.1 eV. Room temperature photoluminescence spectrum exhibits a broad blue-green emission band dominated by two peaks at about 2.4 and 2.8 eV. With the temperature decreasing to 21 K, the peak intensities increase exponentially accompanied by a slight blue-shift in the peak position. We believe that these findings will pave the way for applications of the wide-bandgap GeO2 film in power and optoelectronic devices.

Original languageEnglish
Article number182101
JournalApplied Physics Letters
Issue number18
Publication statusPublished - Nov 1 2021

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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