Pulsed laser crystallization of silicon-germanium films

T. Sameshima; H. Watakabe; H. Kanno; T. Sadoh; M. Miyao

doi:10.1016/j.tsf.2005.01.037

Pulsed laser crystallization of silicon-germanium films

T. Sameshima, H. Watakabe, H. Kanno, T. Sadoh, M. Miyao

Electronic Devices

Research output: Contribution to journal › Conference article › peer-review

19 Citations (Scopus)

Abstract

Pulsed-XeCl excimer laser crystallization of germanium (Ge) and silicon-germanium (SiGe) alloy films formed on quartz glass substrates was investigated. The transient conductance measurements reveled that germanium films were rapidly melted and solidified because of low latent heat compared to silicon films. Formation of silicon-germanium alloy was also observed in the case of laser annealing the Ge/Si layered structure. The crystalline volume ratio was estimated almost 1.0 for Si_0.4Ge_0.6 films because of small disordered electronic states at grain boundaries, while it was 0.85 for Si films.

Original language	English
Pages (from-to)	67-71
Number of pages	5
Journal	Thin Solid Films
Volume	487
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.01.037
Publication status	Published - Sept 1 2005
Event	International Conference on Polycrystalline Semiconductors-Materials, Technologies, Device Applications - Duration: Sept 5 2004 → Sept 10 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2005.01.037

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title = "Pulsed laser crystallization of silicon-germanium films",

abstract = "Pulsed-XeCl excimer laser crystallization of germanium (Ge) and silicon-germanium (SiGe) alloy films formed on quartz glass substrates was investigated. The transient conductance measurements reveled that germanium films were rapidly melted and solidified because of low latent heat compared to silicon films. Formation of silicon-germanium alloy was also observed in the case of laser annealing the Ge/Si layered structure. The crystalline volume ratio was estimated almost 1.0 for Si0.4Ge0.6 films because of small disordered electronic states at grain boundaries, while it was 0.85 for Si films.",

author = "T. Sameshima and H. Watakabe and H. Kanno and T. Sadoh and M. Miyao",

note = "Copyright: Copyright 2008 Elsevier B.V., All rights reserved.; International Conference on Polycrystalline Semiconductors-Materials, Technologies, Device Applications ; Conference date: 05-09-2004 Through 10-09-2004",

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T1 - Pulsed laser crystallization of silicon-germanium films

AU - Sameshima, T.

AU - Watakabe, H.

AU - Kanno, H.

AU - Sadoh, T.

AU - Miyao, M.

PY - 2005/9/1

Y1 - 2005/9/1

N2 - Pulsed-XeCl excimer laser crystallization of germanium (Ge) and silicon-germanium (SiGe) alloy films formed on quartz glass substrates was investigated. The transient conductance measurements reveled that germanium films were rapidly melted and solidified because of low latent heat compared to silicon films. Formation of silicon-germanium alloy was also observed in the case of laser annealing the Ge/Si layered structure. The crystalline volume ratio was estimated almost 1.0 for Si0.4Ge0.6 films because of small disordered electronic states at grain boundaries, while it was 0.85 for Si films.

AB - Pulsed-XeCl excimer laser crystallization of germanium (Ge) and silicon-germanium (SiGe) alloy films formed on quartz glass substrates was investigated. The transient conductance measurements reveled that germanium films were rapidly melted and solidified because of low latent heat compared to silicon films. Formation of silicon-germanium alloy was also observed in the case of laser annealing the Ge/Si layered structure. The crystalline volume ratio was estimated almost 1.0 for Si0.4Ge0.6 films because of small disordered electronic states at grain boundaries, while it was 0.85 for Si films.

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DO - 10.1016/j.tsf.2005.01.037

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AN - SCOPUS:22944465717

SN - 0040-6090

VL - 487

SP - 67

EP - 71

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - International Conference on Polycrystalline Semiconductors-Materials, Technologies, Device Applications

Y2 - 5 September 2004 through 10 September 2004

ER -

Pulsed laser crystallization of silicon-germanium films

Abstract

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