Abstract
The complementary operation of SOI-MOSFET with Pt-silicide source/drain using Schottky contacts is reported. It is demonstrated that the single MOSFET can operate at room temperature in both n- and p-channel modes, thus complementary circuit can be realized without any control of conduction-type of silicon active layer.
| Original language | English |
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| Title of host publication | Annual Device Research Conference Digest |
| Publisher | IEEE |
| Pages | 74-75 |
| Number of pages | 2 |
| Publication status | Published - 1998 |
| Event | Proceedings of the 1998 56th Annual Device Research Conference - Charlottesville, VA, USA Duration: Jun 22 1998 → Jun 24 1998 |
Other
| Other | Proceedings of the 1998 56th Annual Device Research Conference |
|---|---|
| City | Charlottesville, VA, USA |
| Period | 6/22/98 → 6/24/98 |
All Science Journal Classification (ASJC) codes
- Engineering(all)