TY - JOUR
T1 - Properties of various plasma surface treatments for low-temperature Au-Au bonding
AU - Yamamoto, Michitaka
AU - Higurashi, Eiji
AU - Suga, Tadatomo
AU - Sawada, Renshi
AU - Itoh, Toshihiro
N1 - Funding Information:
Part of this study was supported by JSPS KAKENHI Grant Numbers 23246125 and 25289085.
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2018/4
Y1 - 2018/4
N2 - Atmospheric-pressure (AP) plasma treatment using three different types of gases (an argon-hydrogen mixed gas, an argon-oxygen mixed gas, and a nitrogen gas) and low-pressure (LP) plasma treatment using an argon gas were compared for Au-Au bonding with thin films and stud bumps at low temperature (25 or 150 °C) in ambient air. The argon-hydrogen gas mixture AP plasma treatment and argon LP plasma treatment were found to distinctly increase the shear bond strength for both samples at both temperatures. From X-ray photoelectron spectroscopy (XPS) analysis, the removal of organic contaminants on Au surfaces without the formation of hydroxyl groups and gold oxide is considered effective in increasing the Au-Au bonding strength at low temperature.
AB - Atmospheric-pressure (AP) plasma treatment using three different types of gases (an argon-hydrogen mixed gas, an argon-oxygen mixed gas, and a nitrogen gas) and low-pressure (LP) plasma treatment using an argon gas were compared for Au-Au bonding with thin films and stud bumps at low temperature (25 or 150 °C) in ambient air. The argon-hydrogen gas mixture AP plasma treatment and argon LP plasma treatment were found to distinctly increase the shear bond strength for both samples at both temperatures. From X-ray photoelectron spectroscopy (XPS) analysis, the removal of organic contaminants on Au surfaces without the formation of hydroxyl groups and gold oxide is considered effective in increasing the Au-Au bonding strength at low temperature.
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U2 - 10.7567/JJAP.57.04FC12
DO - 10.7567/JJAP.57.04FC12
M3 - Article
AN - SCOPUS:85044464354
SN - 0021-4922
VL - 57
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 4
M1 - 04FC12
ER -