Properties of nano-crystalline silicon films for top solar cells

Shinya Iwasita; Toshihisa Inoue; Kazunori Koga; Masaharu Shiratani; Shota Nunomura; Michio Kondo

doi:10.1109/WCPEC.2006.279809

Properties of nano-crystalline silicon films for top solar cells

Shinya Iwasita
, Toshihisa Inoue
, Kazunori Koga
, Masaharu Shiratani
, Shota Nunomura
, Michio Kondo

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Nano-crystalline Si films are deposited using multi-hollow plasma CVD. The films have a wide optical band gap of 1.75 eV and a large absorption coefficient similar to those of a-Si:H films. They also have a low initial defect density of 3×10¹⁵ cm³ and show high stability against light soaking. These results suggest that nano-crystalline Si films are promising materials for top cells.

Original language	English
Title of host publication	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Publisher	IEEE Computer Society
Pages	1664-1667
Number of pages	4
ISBN (Print)	1424400163, 9781424400164
DOIs	https://doi.org/10.1109/WCPEC.2006.279809
Publication status	Published - Jan 1 2006
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: May 7 2006 → May 12 2006

Publication series

Name	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume	2

Other

Other	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/Territory	United States
City	Waikoloa, HI
Period	5/7/06 → 5/12/06

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

Access to Document

10.1109/WCPEC.2006.279809

Cite this

Iwasita, S., Inoue, T., Koga, K., Shiratani, M., Nunomura, S., & Kondo, M. (2006). Properties of nano-crystalline silicon films for top solar cells. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 1664-1667). Article 4059975 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 2). IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279809

Properties of nano-crystalline silicon films for top solar cells. / Iwasita, Shinya; Inoue, Toshihisa; Koga, Kazunori et al.
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. p. 1664-1667 4059975 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Iwasita, S, Inoue, T, Koga, K , Shiratani, M, Nunomura, S & Kondo, M 2006, Properties of nano-crystalline silicon films for top solar cells. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4059975, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, vol. 2, IEEE Computer Society, pp. 1664-1667, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 5/7/06. https://doi.org/10.1109/WCPEC.2006.279809

Iwasita S, Inoue T, Koga K , Shiratani M, Nunomura S, Kondo M. Properties of nano-crystalline silicon films for top solar cells. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society. 2006. p. 1664-1667. 4059975. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). doi: 10.1109/WCPEC.2006.279809

Iwasita, Shinya ; Inoue, Toshihisa ; Koga, Kazunori et al. / Properties of nano-crystalline silicon films for top solar cells. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. pp. 1664-1667 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).

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Properties of nano-crystalline silicon films for top solar cells

Abstract

Publication series

Other

UN SDGs

All Science Journal Classification (ASJC) codes

Access to Document

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