@inproceedings{fd5bd1ad195a45a2911e1ef0b902ed52,
title = "Properties of nano-crystalline silicon films for top solar cells",
abstract = "Nano-crystalline Si films are deposited using multi-hollow plasma CVD. The films have a wide optical band gap of 1.75 eV and a large absorption coefficient similar to those of a-Si:H films. They also have a low initial defect density of 3×1015 cm3 and show high stability against light soaking. These results suggest that nano-crystalline Si films are promising materials for top cells.",
author = "Shinya Iwasita and Toshihisa Inoue and Kazunori Koga and Masaharu Shiratani and Shota Nunomura and Michio Kondo",
year = "2006",
month = jan,
day = "1",
doi = "10.1109/WCPEC.2006.279809",
language = "English",
isbn = "1424400163",
series = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",
publisher = "IEEE Computer Society",
pages = "1664--1667",
booktitle = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",
address = "United States",
note = "2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 ; Conference date: 07-05-2006 Through 12-05-2006",
}