Properties of nano-crystalline silicon films for top solar cells

Shinya Iwasita, Toshihisa Inoue, Kazunori Koga, Masaharu Shiratani, Shota Nunomura, Michio Kondo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nano-crystalline Si films are deposited using multi-hollow plasma CVD. The films have a wide optical band gap of 1.75 eV and a large absorption coefficient similar to those of a-Si:H films. They also have a low initial defect density of 3×1015 cm3 and show high stability against light soaking. These results suggest that nano-crystalline Si films are promising materials for top cells.

Original languageEnglish
Title of host publicationConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
PublisherIEEE Computer Society
Pages1664-1667
Number of pages4
ISBN (Print)1424400163, 9781424400164
DOIs
Publication statusPublished - Jan 1 2006
Event2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States
Duration: May 7 2006May 12 2006

Publication series

NameConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume2

Other

Other2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/TerritoryUnited States
CityWaikoloa, HI
Period5/7/065/12/06

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Properties of nano-crystalline silicon films for top solar cells'. Together they form a unique fingerprint.

Cite this