Prominent thermodynamical interaction with surroundings on nanoscale memristive switching of metal oxides

Kazuki Nagashima; Takeshi Yanagida; Keisuke Oka; Masaki Kanai; Annop Klamchuen; Sakon Rahong; Gang Meng; Mati Horprathum; Bo Xu; Fuwei Zhuge; Yong He; Bae Ho Park; Tomoji Kawai

doi:10.1021/nl302880a

Prominent thermodynamical interaction with surroundings on nanoscale memristive switching of metal oxides

Kazuki Nagashima, Takeshi Yanagida, Keisuke Oka, Masaki Kanai, Annop Klamchuen, Sakon Rahong, Gang Meng, Mati Horprathum, Bo Xu, Fuwei Zhuge, Yong He, Bae Ho Park, Tomoji Kawai

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

This study demonstrates the effect of surroundings on a memristive switching at nanoscale by utilizing an open top planar-type device. NiO _x and CoO_x planar-type devices have exhibited a memristive behavior under atmospheric pressure, whereas TiO_2-x planar-type devices did not show a memristive switching even under the same surroundings. A memristive behavior of TiO_2-x planar-type devices has emerged when reducing an ambient pressure and/or employing a SiO₂ passivation layer. These results reveal that a thermodynamical interaction with surroundings critically determines the occurrence of memristive switching via varying a stability of nonstoichiometry. Since this effect tends to be more significant for smaller devices with larger specific surface area, tailoring the surrounding effect by an appropriate passivation will be essential for high density devices.

Original language	English
Pages (from-to)	5684-5690
Number of pages	7
Journal	Nano Letters
Volume	12
Issue number	11
DOIs	https://doi.org/10.1021/nl302880a
Publication status	Published - Nov 14 2012
Externally published	Yes

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl302880a

Cite this

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title = "Prominent thermodynamical interaction with surroundings on nanoscale memristive switching of metal oxides",

abstract = "This study demonstrates the effect of surroundings on a memristive switching at nanoscale by utilizing an open top planar-type device. NiO x and CoOx planar-type devices have exhibited a memristive behavior under atmospheric pressure, whereas TiO2-x planar-type devices did not show a memristive switching even under the same surroundings. A memristive behavior of TiO2-x planar-type devices has emerged when reducing an ambient pressure and/or employing a SiO2 passivation layer. These results reveal that a thermodynamical interaction with surroundings critically determines the occurrence of memristive switching via varying a stability of nonstoichiometry. Since this effect tends to be more significant for smaller devices with larger specific surface area, tailoring the surrounding effect by an appropriate passivation will be essential for high density devices.",

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T1 - Prominent thermodynamical interaction with surroundings on nanoscale memristive switching of metal oxides

AU - Nagashima, Kazuki

AU - Yanagida, Takeshi

AU - Oka, Keisuke

AU - Kanai, Masaki

AU - Klamchuen, Annop

AU - Rahong, Sakon

AU - Meng, Gang

AU - Horprathum, Mati

AU - Xu, Bo

AU - Zhuge, Fuwei

AU - He, Yong

AU - Park, Bae Ho

AU - Kawai, Tomoji

PY - 2012/11/14

Y1 - 2012/11/14

N2 - This study demonstrates the effect of surroundings on a memristive switching at nanoscale by utilizing an open top planar-type device. NiO x and CoOx planar-type devices have exhibited a memristive behavior under atmospheric pressure, whereas TiO2-x planar-type devices did not show a memristive switching even under the same surroundings. A memristive behavior of TiO2-x planar-type devices has emerged when reducing an ambient pressure and/or employing a SiO2 passivation layer. These results reveal that a thermodynamical interaction with surroundings critically determines the occurrence of memristive switching via varying a stability of nonstoichiometry. Since this effect tends to be more significant for smaller devices with larger specific surface area, tailoring the surrounding effect by an appropriate passivation will be essential for high density devices.

AB - This study demonstrates the effect of surroundings on a memristive switching at nanoscale by utilizing an open top planar-type device. NiO x and CoOx planar-type devices have exhibited a memristive behavior under atmospheric pressure, whereas TiO2-x planar-type devices did not show a memristive switching even under the same surroundings. A memristive behavior of TiO2-x planar-type devices has emerged when reducing an ambient pressure and/or employing a SiO2 passivation layer. These results reveal that a thermodynamical interaction with surroundings critically determines the occurrence of memristive switching via varying a stability of nonstoichiometry. Since this effect tends to be more significant for smaller devices with larger specific surface area, tailoring the surrounding effect by an appropriate passivation will be essential for high density devices.

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Prominent thermodynamical interaction with surroundings on nanoscale memristive switching of metal oxides

Abstract

All Science Journal Classification (ASJC) codes

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