Production of low electron temperature ECR plasma

Y. Kawai; N. Itagaki; M. Koga; H. Muta

doi:10.1016/j.surfcoat.2004.08.141

Production of low electron temperature ECR plasma

Y. Kawai, N. Itagaki, M. Koga, H. Muta

Department of I&E Visionaries

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The experiments and simulations on the control of the plasma parameters are performed using large diameter electron cyclotron resonance (ECR) plasmas. It is found that the plasma parameters are controlled by diluting with N₂ gas in the mirror magnetic field. The electron temperature (T_e) decreases down to 40% and the electron density (n_e) increases up to 80%, respectively, that is, a low T_e ECR plasma with high n_e is realized. Furthermore, the T_e control is attempted by changing the spatial profile of the microwave power absorption. It is observed that T_e decreases with changing the power absorption profile that is achieved by changing the external conditions such as incident microwave power, magnetic field configuration, and incident microwave frequency. The production mechanism of an ECR plasma with plasma parameter variable is also discussed.

Original language	English
Pages (from-to)	11-16
Number of pages	6
Journal	Surface and Coatings Technology
Volume	193
Issue number	1-3 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.surfcoat.2004.08.141
Publication status	Published - Apr 1 2005

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.surfcoat.2004.08.141

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title = "Production of low electron temperature ECR plasma",

abstract = "The experiments and simulations on the control of the plasma parameters are performed using large diameter electron cyclotron resonance (ECR) plasmas. It is found that the plasma parameters are controlled by diluting with N2 gas in the mirror magnetic field. The electron temperature (Te) decreases down to 40% and the electron density (ne) increases up to 80%, respectively, that is, a low Te ECR plasma with high ne is realized. Furthermore, the Te control is attempted by changing the spatial profile of the microwave power absorption. It is observed that Te decreases with changing the power absorption profile that is achieved by changing the external conditions such as incident microwave power, magnetic field configuration, and incident microwave frequency. The production mechanism of an ECR plasma with plasma parameter variable is also discussed.",

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T1 - Production of low electron temperature ECR plasma

AU - Kawai, Y.

AU - Itagaki, N.

AU - Koga, M.

AU - Muta, H.

PY - 2005/4/1

Y1 - 2005/4/1

N2 - The experiments and simulations on the control of the plasma parameters are performed using large diameter electron cyclotron resonance (ECR) plasmas. It is found that the plasma parameters are controlled by diluting with N2 gas in the mirror magnetic field. The electron temperature (Te) decreases down to 40% and the electron density (ne) increases up to 80%, respectively, that is, a low Te ECR plasma with high ne is realized. Furthermore, the Te control is attempted by changing the spatial profile of the microwave power absorption. It is observed that Te decreases with changing the power absorption profile that is achieved by changing the external conditions such as incident microwave power, magnetic field configuration, and incident microwave frequency. The production mechanism of an ECR plasma with plasma parameter variable is also discussed.

AB - The experiments and simulations on the control of the plasma parameters are performed using large diameter electron cyclotron resonance (ECR) plasmas. It is found that the plasma parameters are controlled by diluting with N2 gas in the mirror magnetic field. The electron temperature (Te) decreases down to 40% and the electron density (ne) increases up to 80%, respectively, that is, a low Te ECR plasma with high ne is realized. Furthermore, the Te control is attempted by changing the spatial profile of the microwave power absorption. It is observed that Te decreases with changing the power absorption profile that is achieved by changing the external conditions such as incident microwave power, magnetic field configuration, and incident microwave frequency. The production mechanism of an ECR plasma with plasma parameter variable is also discussed.

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JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 1-3 SPEC. ISS.

ER -

Production of low electron temperature ECR plasma

Abstract

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