TY - GEN
T1 - Processing properties of strong oxidizing slurry and effect of processing atmosphere in SiC-CMP
AU - Yin, Tao
AU - Doi, Toshiro
AU - Kurokawa, Syuhei
AU - Ohnishi, Osamu
AU - Yamazaki, Tsutomu
AU - Wang, Zhida
AU - Tan, Zhe
N1 - Funding Information:
This study was sponsored by the National Science Council of JSPS under the project No.A-2024633. And this work was supported by the JSPS Institutional Program for Young Researcher Overseas Visits. The authors would like to express sincere thanks to JSPS.
Publisher Copyright:
© ICPT 2012 - International Conference on Planarization/CMP Technology, Proceedings. All rights reserved.
PY - 2012
Y1 - 2012
N2 - In order to achieve high removal rate and high-quality processing on SiC wafer, we carried out the CMP experiment with the new type CMP machine (Bell-jar) by using the slurry with strong oxidant(KMnO4). We realize the high speed CMP processing by changing the amount of oxidant, slurry pH, abrasive concentration, rotation speed, and the processing atmosphere. By using strong oxidant agent, a high removal rate can be obtained on C-face, so we can consider that C-face of SiC wafer can easily be oxidized. On Si-face of SiC wafer, however, the removal rate depends on pH and abrasive concentration, because a high oxidization speed can inhibit the CMP process. The processing mechanism of slurry by adding KMNO4 is discussed and one of the most effective processing conditions for SiC-CMP is proposed.
AB - In order to achieve high removal rate and high-quality processing on SiC wafer, we carried out the CMP experiment with the new type CMP machine (Bell-jar) by using the slurry with strong oxidant(KMnO4). We realize the high speed CMP processing by changing the amount of oxidant, slurry pH, abrasive concentration, rotation speed, and the processing atmosphere. By using strong oxidant agent, a high removal rate can be obtained on C-face, so we can consider that C-face of SiC wafer can easily be oxidized. On Si-face of SiC wafer, however, the removal rate depends on pH and abrasive concentration, because a high oxidization speed can inhibit the CMP process. The processing mechanism of slurry by adding KMNO4 is discussed and one of the most effective processing conditions for SiC-CMP is proposed.
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M3 - Conference contribution
AN - SCOPUS:84905044279
T3 - ICPT 2012 - International Conference on Planarization/CMP Technology, Proceedings
SP - 333
EP - 338
BT - ICPT 2012 - International Conference on Planarization/CMP Technology, Proceedings
PB - VDE Verlag GmbH
T2 - 2012 International Conference on Planarization/CMP Technology, ICPT 2012
Y2 - 15 October 2012 through 17 October 2012
ER -