Probing local electronic transport at the organic single-crystal/dielectric interface

Probing of the local electric potential at the organic/dielectric interface in sub-μm thick organic single-crystals (OSCs) by the scanning Kelvin probe microscopy (SKPM) has been demonstrated. Electrical and SKPM investigations were performed at ambient conditions on electrostatically bonded sub-μm thick rubrene single-crystals on Si back-gated FET structures with SiO₂ dielectric and metal source drain contacts recessed in the oxide. It was observed that SKPM can be successfully applied to map the local electric potential at the sub-μm thick single-crystal/dielectric interface under bias. This allows determining the contact and channel resistances, their bias dependences, and provides access to the intrinsic electronic transport and interfacial effects in semi-conducting single-crystals.