Abstract
<p>We have studied the magnetoresistance of an enhanced-biased spin valve device under high pressure. The magnetoresistance decreases by 0.0014 up to 2 GPa with increasing pressure, which is inferred to be due to slight deviation from an antiparallel-spin configuration of the free and pinned layers. In the pressure range between 2 and 2.75 GPa, the exchange bias field generated in the pinned layer decreases and the coercivity of the free layers clearly increases by ∼5 Oe, which is likely to be related to less hydrostatic pressure.</p>
Original language | English |
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Pages (from-to) | 1483-1486 |
Number of pages | 4 |
Journal | Materials Transactions |
Volume | 61 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2020 |