Pressure effect in sublimation growth of bulk SiC

Yasuo Kitou, Wook Bahng, Shin Ichi Nishizawa, Shigehiro Nishino, Kazuo Arai

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


The effect of growth pressure on the impurity incorporation as well as on the crystal quality was investigated in sublimation growth of a bulk SiC single crystal. The growth pressure was varied within the range of 1-100 Torr and it was found that many voids or precipitates were generated in the grown crystals and the Aluminum (Al) impurity incorporation increased during the Si-face growth when the growth pressure decreased. The pressure effect on the Al impurity incorporation with the change of step structure was discussed.

Original languageEnglish
Pages (from-to)I/-
JournalMaterials Science Forum
Publication statusPublished - 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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