Preparation of YBa2Cu3O7-y High Tc Thin Films on NdGaO3 Substrate by Laser Ablation

Masashi Mukaida; Shintaro Miyazawa; Masahiro Sasaura; Ken'ichi Kuroda

doi:10.1143/JJAP.29.L936

Preparation of YBa₂Cu₃O_7-y High T_c Thin Films on NdGaO₃ Substrate by Laser Ablation

Masashi Mukaida, Shintaro Miyazawa, Masahiro Sasaura, Ken'ichi Kuroda

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

As-grown thin films of YBa₂Cu₃O_7-y with a smooth surface were obtained on lattice-matched NdGaO₃ substrates by ArF laser ablation deposition. The as-grown thin film has a zero-resistance temperature (T_c) at 90 K. The full width at half-maximum (FWHM) of the X-ray diffraction peak (005) of the thin film was as narrow as 0.12 degrees. These results suggest that the as-grown YBa₂Cu₃O_7-y films on NdGaO₃ substrates were high-quality single crystals. NdGaO₃ substrates are thought to be a promising substrate for epitaxial growth of YBa₂Cu₃O_7-y high T_c thin films.

Original language	English
Pages (from-to)	L936-L939
Journal	Japanese Journal of Applied Physics
Volume	29
Issue number	6
DOIs	https://doi.org/10.1143/JJAP.29.L936
Publication status	Published - Jun 1990
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Preparation of YBa2Cu3O7-y High Tc Thin Films on NdGaO3 Substrate by Laser Ablation",

abstract = "As-grown thin films of YBa2Cu3O7-y with a smooth surface were obtained on lattice-matched NdGaO3 substrates by ArF laser ablation deposition. The as-grown thin film has a zero-resistance temperature (Tc) at 90 K. The full width at half-maximum (FWHM) of the X-ray diffraction peak (005) of the thin film was as narrow as 0.12 degrees. These results suggest that the as-grown YBa2Cu3O7-y films on NdGaO3 substrates were high-quality single crystals. NdGaO3 substrates are thought to be a promising substrate for epitaxial growth of YBa2Cu3O7-y high Tc thin films.",

author = "Masashi Mukaida and Shintaro Miyazawa and Masahiro Sasaura and Ken'ichi Kuroda",

year = "1990",

month = jun,

doi = "10.1143/JJAP.29.L936",

language = "English",

volume = "29",

pages = "L936--L939",

journal = "Japanese Journal of Applied Physics",

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TY - JOUR

T1 - Preparation of YBa2Cu3O7-y High Tc Thin Films on NdGaO3 Substrate by Laser Ablation

AU - Mukaida, Masashi

AU - Miyazawa, Shintaro

AU - Sasaura, Masahiro

AU - Kuroda, Ken'ichi

PY - 1990/6

Y1 - 1990/6

N2 - As-grown thin films of YBa2Cu3O7-y with a smooth surface were obtained on lattice-matched NdGaO3 substrates by ArF laser ablation deposition. The as-grown thin film has a zero-resistance temperature (Tc) at 90 K. The full width at half-maximum (FWHM) of the X-ray diffraction peak (005) of the thin film was as narrow as 0.12 degrees. These results suggest that the as-grown YBa2Cu3O7-y films on NdGaO3 substrates were high-quality single crystals. NdGaO3 substrates are thought to be a promising substrate for epitaxial growth of YBa2Cu3O7-y high Tc thin films.

AB - As-grown thin films of YBa2Cu3O7-y with a smooth surface were obtained on lattice-matched NdGaO3 substrates by ArF laser ablation deposition. The as-grown thin film has a zero-resistance temperature (Tc) at 90 K. The full width at half-maximum (FWHM) of the X-ray diffraction peak (005) of the thin film was as narrow as 0.12 degrees. These results suggest that the as-grown YBa2Cu3O7-y films on NdGaO3 substrates were high-quality single crystals. NdGaO3 substrates are thought to be a promising substrate for epitaxial growth of YBa2Cu3O7-y high Tc thin films.

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Preparation of YBa₂Cu₃O_7-y High T_c Thin Films on NdGaO₃ Substrate by Laser Ablation

Abstract

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