Preparation of tungsten tip that emits electron at extremely low bias voltage

F. Rahman; Seigi Mizuno; Hiroshi Tochihara

doi:10.1109/IVNC.2006.335458

Preparation of tungsten tip that emits electron at extremely low bias voltage

F. Rahman, Seigi Mizuno, Hiroshi Tochihara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium
Pages	261-262
Number of pages	2
DOIs	https://doi.org/10.1109/IVNC.2006.335458
Publication status	Published - 2006
Event	19th International Vacuum Nanoelecronics Conference and 50th International Field Emission Symposium, IVNC and IFES 2006 - Guilin, China Duration: Jul 17 2006 → Jul 20 2006

Publication series

Name	IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium

Other

Other	19th International Vacuum Nanoelecronics Conference and 50th International Field Emission Symposium, IVNC and IFES 2006
Country/Territory	China
City	Guilin
Period	7/17/06 → 7/20/06

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/IVNC.2006.335458

Cite this

Rahman, F., Mizuno, S., & Tochihara, H. (2006). Preparation of tungsten tip that emits electron at extremely low bias voltage. In IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium (pp. 261-262). Article 4134560 (IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium). https://doi.org/10.1109/IVNC.2006.335458

Preparation of tungsten tip that emits electron at extremely low bias voltage. / Rahman, F.; Mizuno, Seigi; Tochihara, Hiroshi.
IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium. 2006. p. 261-262 4134560 (IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Rahman, F, Mizuno, S & Tochihara, H 2006, Preparation of tungsten tip that emits electron at extremely low bias voltage. in IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium., 4134560, IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium, pp. 261-262, 19th International Vacuum Nanoelecronics Conference and 50th International Field Emission Symposium, IVNC and IFES 2006, Guilin, China, 7/17/06. https://doi.org/10.1109/IVNC.2006.335458

Rahman F, Mizuno S, Tochihara H. Preparation of tungsten tip that emits electron at extremely low bias voltage. In IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium. 2006. p. 261-262. 4134560. (IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium). doi: 10.1109/IVNC.2006.335458

Rahman, F. ; Mizuno, Seigi ; Tochihara, Hiroshi. / Preparation of tungsten tip that emits electron at extremely low bias voltage. IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium. 2006. pp. 261-262 (IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium).

@inproceedings{dedc133947f14cb8b652d01ff829da9d,

title = "Preparation of tungsten tip that emits electron at extremely low bias voltage",

author = "F. Rahman and Seigi Mizuno and Hiroshi Tochihara",

year = "2006",

doi = "10.1109/IVNC.2006.335458",

language = "English",

isbn = "1424404010",

series = "IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium",

pages = "261--262",

booktitle = "IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium",

note = "19th International Vacuum Nanoelecronics Conference and 50th International Field Emission Symposium, IVNC and IFES 2006 ; Conference date: 17-07-2006 Through 20-07-2006",

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BT - IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium

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Y2 - 17 July 2006 through 20 July 2006

ER -

Preparation of tungsten tip that emits electron at extremely low bias voltage

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