Preparation of LaGaO 3 thin film for intermediate temperature SOFC by screen printing method (I): LSGM as an effective sintering agent for La-doped CeO 2 buffer layer

Jong Eun Hong; Toru Inagaki; Tatsumi Ishihara

doi:10.1007/s11581-012-0684-1

Preparation of LaGaO ₃ thin film for intermediate temperature SOFC by screen printing method (I): LSGM as an effective sintering agent for La-doped CeO ₂ buffer layer

Jong Eun Hong, Toru Inagaki, Tatsumi Ishihara

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

La-doped ceria (Ce _0.6La _0.4O _1.8 [LDC]) has been reported to be an effective buffer layer material for preventing the chemical reaction between Sr- and Mg-doped LaGaO ₃ (LSGM) electrolyte and Ni-based anode during sintering. However, it seems difficult to achieve a high power density on the cell using LDC buffer layer because of its low sintering and electrical conducting properties. In this study, effects of various sintering additives such as MgO, SrO, In ₂O ₃, Ga ₂O ₃, ZrO ₂, and LSGM oxide powders were studied for improving sintering density and electrical conductivity of LDC. Sintering property, phase formation, and electrical conductivity varied with the sintering agents. Addition of SrO, Ga ₂O ₃, or LSGM enhanced the sintering density of LDC while LSGM addition was effective to increase the electrical conductivity. LSGM sintering aid was inert with LDC accompanying no chemical reaction after sintering at 1,623 K. Therefore, it was considered that a small amount of LSGM addition as a sintering agent was desirable for improving sintering and electrical properties of LDC. Furthermore, a single cell using LSGM-added LDC buffer layer and LSGM electrolyte film was fabricated by a screen printing method after co-firing at 1,623 K. The obtained cell showed an almost theoretical open circuit voltage and a high maximum power density (0.725 W cm ^-2) at 973 K.

Original language	English
Pages (from-to)	433-439
Number of pages	7
Journal	Ionics
Volume	18
Issue number	5
DOIs	https://doi.org/10.1007/s11581-012-0684-1
Publication status	Published - May 2012

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Engineering(all)
Physics and Astronomy(all)

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10.1007/s11581-012-0684-1

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@article{63ce0d8252e14702914946120f920b91,

title = "Preparation of LaGaO 3 thin film for intermediate temperature SOFC by screen printing method (I): LSGM as an effective sintering agent for La-doped CeO 2 buffer layer",

abstract = "La-doped ceria (Ce 0.6La 0.4O 1.8 [LDC]) has been reported to be an effective buffer layer material for preventing the chemical reaction between Sr- and Mg-doped LaGaO 3 (LSGM) electrolyte and Ni-based anode during sintering. However, it seems difficult to achieve a high power density on the cell using LDC buffer layer because of its low sintering and electrical conducting properties. In this study, effects of various sintering additives such as MgO, SrO, In 2O 3, Ga 2O 3, ZrO 2, and LSGM oxide powders were studied for improving sintering density and electrical conductivity of LDC. Sintering property, phase formation, and electrical conductivity varied with the sintering agents. Addition of SrO, Ga 2O 3, or LSGM enhanced the sintering density of LDC while LSGM addition was effective to increase the electrical conductivity. LSGM sintering aid was inert with LDC accompanying no chemical reaction after sintering at 1,623 K. Therefore, it was considered that a small amount of LSGM addition as a sintering agent was desirable for improving sintering and electrical properties of LDC. Furthermore, a single cell using LSGM-added LDC buffer layer and LSGM electrolyte film was fabricated by a screen printing method after co-firing at 1,623 K. The obtained cell showed an almost theoretical open circuit voltage and a high maximum power density (0.725 W cm -2) at 973 K.",

author = "Hong, {Jong Eun} and Toru Inagaki and Tatsumi Ishihara",

year = "2012",

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T1 - Preparation of LaGaO 3 thin film for intermediate temperature SOFC by screen printing method (I)

T2 - LSGM as an effective sintering agent for La-doped CeO 2 buffer layer

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AU - Inagaki, Toru

AU - Ishihara, Tatsumi

PY - 2012/5

Y1 - 2012/5

N2 - La-doped ceria (Ce 0.6La 0.4O 1.8 [LDC]) has been reported to be an effective buffer layer material for preventing the chemical reaction between Sr- and Mg-doped LaGaO 3 (LSGM) electrolyte and Ni-based anode during sintering. However, it seems difficult to achieve a high power density on the cell using LDC buffer layer because of its low sintering and electrical conducting properties. In this study, effects of various sintering additives such as MgO, SrO, In 2O 3, Ga 2O 3, ZrO 2, and LSGM oxide powders were studied for improving sintering density and electrical conductivity of LDC. Sintering property, phase formation, and electrical conductivity varied with the sintering agents. Addition of SrO, Ga 2O 3, or LSGM enhanced the sintering density of LDC while LSGM addition was effective to increase the electrical conductivity. LSGM sintering aid was inert with LDC accompanying no chemical reaction after sintering at 1,623 K. Therefore, it was considered that a small amount of LSGM addition as a sintering agent was desirable for improving sintering and electrical properties of LDC. Furthermore, a single cell using LSGM-added LDC buffer layer and LSGM electrolyte film was fabricated by a screen printing method after co-firing at 1,623 K. The obtained cell showed an almost theoretical open circuit voltage and a high maximum power density (0.725 W cm -2) at 973 K.

AB - La-doped ceria (Ce 0.6La 0.4O 1.8 [LDC]) has been reported to be an effective buffer layer material for preventing the chemical reaction between Sr- and Mg-doped LaGaO 3 (LSGM) electrolyte and Ni-based anode during sintering. However, it seems difficult to achieve a high power density on the cell using LDC buffer layer because of its low sintering and electrical conducting properties. In this study, effects of various sintering additives such as MgO, SrO, In 2O 3, Ga 2O 3, ZrO 2, and LSGM oxide powders were studied for improving sintering density and electrical conductivity of LDC. Sintering property, phase formation, and electrical conductivity varied with the sintering agents. Addition of SrO, Ga 2O 3, or LSGM enhanced the sintering density of LDC while LSGM addition was effective to increase the electrical conductivity. LSGM sintering aid was inert with LDC accompanying no chemical reaction after sintering at 1,623 K. Therefore, it was considered that a small amount of LSGM addition as a sintering agent was desirable for improving sintering and electrical properties of LDC. Furthermore, a single cell using LSGM-added LDC buffer layer and LSGM electrolyte film was fabricated by a screen printing method after co-firing at 1,623 K. The obtained cell showed an almost theoretical open circuit voltage and a high maximum power density (0.725 W cm -2) at 973 K.

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Preparation of LaGaO ₃ thin film for intermediate temperature SOFC by screen printing method (I): LSGM as an effective sintering agent for La-doped CeO ₂ buffer layer

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