Preparation of KTiOPO4 thin films on different substrates by pulsed laser deposition

Nilesh J. Vasa; Yasunari Hata; Tsuyoshi Yoshitake; Shigeru Yokoyama

doi:10.1007/s00170-007-1040-x

Preparation of KTiOPO₄ thin films on different substrates by pulsed laser deposition

Nilesh J. Vasa, Yasunari Hata, Tsuyoshi Yoshitake, Shigeru Yokoyama

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Pulsed laser deposition (PLD) technique is applied in fabrication of thin films of KTiOPO₄ (KTP) material, which possesses electro-optic and nonlinear optical properties. Thin film fabrication of optically functional KTP on fused silica and different sapphire substrates by changing an ambient oxygen pressure and a substrate temperature during PLD is investigated. Highly oriented KTP thin films could be grown on sapphire (112̄0)in an oxygen atmosphere by PLD using a composite target whose stoichiometry is nearly same as KTP. Although the film contained polycrystalline crystallites, predominant crystallites seemed to be epitaxially grown.

Original language	English
Pages (from-to)	600-604
Number of pages	5
Journal	International Journal of Advanced Manufacturing Technology
Volume	38
Issue number	5-6
DOIs	https://doi.org/10.1007/s00170-007-1040-x
Publication status	Published - Aug 2008

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Software
Mechanical Engineering
Computer Science Applications
Industrial and Manufacturing Engineering

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10.1007/s00170-007-1040-x

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abstract = "Pulsed laser deposition (PLD) technique is applied in fabrication of thin films of KTiOPO4 (KTP) material, which possesses electro-optic and nonlinear optical properties. Thin film fabrication of optically functional KTP on fused silica and different sapphire substrates by changing an ambient oxygen pressure and a substrate temperature during PLD is investigated. Highly oriented KTP thin films could be grown on sapphire (11{\=2}0)in an oxygen atmosphere by PLD using a composite target whose stoichiometry is nearly same as KTP. Although the film contained polycrystalline crystallites, predominant crystallites seemed to be epitaxially grown.",

author = "Vasa, {Nilesh J.} and Yasunari Hata and Tsuyoshi Yoshitake and Shigeru Yokoyama",

year = "2008",

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T1 - Preparation of KTiOPO4 thin films on different substrates by pulsed laser deposition

AU - Vasa, Nilesh J.

AU - Hata, Yasunari

AU - Yoshitake, Tsuyoshi

AU - Yokoyama, Shigeru

PY - 2008/8

Y1 - 2008/8

N2 - Pulsed laser deposition (PLD) technique is applied in fabrication of thin films of KTiOPO4 (KTP) material, which possesses electro-optic and nonlinear optical properties. Thin film fabrication of optically functional KTP on fused silica and different sapphire substrates by changing an ambient oxygen pressure and a substrate temperature during PLD is investigated. Highly oriented KTP thin films could be grown on sapphire (112̄0)in an oxygen atmosphere by PLD using a composite target whose stoichiometry is nearly same as KTP. Although the film contained polycrystalline crystallites, predominant crystallites seemed to be epitaxially grown.

AB - Pulsed laser deposition (PLD) technique is applied in fabrication of thin films of KTiOPO4 (KTP) material, which possesses electro-optic and nonlinear optical properties. Thin film fabrication of optically functional KTP on fused silica and different sapphire substrates by changing an ambient oxygen pressure and a substrate temperature during PLD is investigated. Highly oriented KTP thin films could be grown on sapphire (112̄0)in an oxygen atmosphere by PLD using a composite target whose stoichiometry is nearly same as KTP. Although the film contained polycrystalline crystallites, predominant crystallites seemed to be epitaxially grown.

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ER -

Preparation of KTiOPO₄ thin films on different substrates by pulsed laser deposition

Abstract

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